电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N3613

产品描述1 A, SILICON, SIGNAL DIODE, DO-41
产品类别分立半导体    二极管   
文件大小72KB,共1页
制造商EIC [EIC discrete Semiconductors]
下载文档 详细参数 选型对比 全文预览

1N3613在线购买

供应商 器件名称 价格 最低购买 库存  
1N3613 - - 点击查看 点击购买

1N3613概述

1 A, SILICON, SIGNAL DIODE, DO-41

1N3613规格参数

参数名称属性值
是否无铅不含铅
厂商名称EIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN代码EAR99

文档预览

下载PDF文档
Certificate TH97/10561QM
Certificate TW00/17276EM
1N3611 - 1N3614
1N3657
PRV : 200 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
Glass passivated chip
High forward surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
M1A
0.085(2.16)
0.075(1.91)
1.00 (25.4)
MIN.
0.138(3.51)
0.122(3.10)
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
0.024(0.60)
0.022(0.55)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100
μA
Maximum Average Forward Current at Ta = 100 °C
at Ta = 150 °C
Peak Forward Surge Current (8.3 ms half-sine)
Maximum Forward Voltage at I
F
= 1.0 A
Maximum Reverse Current
at V
RWM
, Ta = 25 °C
at V
RWM
, Ta = 150 °C
Thermal Resistance , Junction to Lead (Note 1)
Operating Junction and Storage Temperature Range
Note :
(1) At 3/8"(10 mm) lead length form body.
SYMBOL 1N3611 1N3612 1N3613 1N3614 1N3657
V
RWM
V
BR(MIN)
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
R
ӨJL
T
J
, T
STG
200
240
400
480
600
720
1.0
0.3
30
1.1
1.0
300
38
-65 to +175
800
920
1000
1150
UNIT
V
V
A
A
V
μA
°C/W
°C
Page 1 of 1
Rev. 03 : November 2, 2006

1N3613相似产品对比

1N3613 1N3612 NCEP15T11D 1N3614
描述 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE NCE N-Channel Super Trench Power MOSFET 1 A, SILICON, SIGNAL DIODE
是否无铅 不含铅 不含铅 - 不含铅
厂商名称 EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors]
Reach Compliance Code compli compli - compli
ECCN代码 EAR99 EAR99 - EAR99

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1199  1424  2736  374  2440  25  29  56  8  50 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved