IDC73D120T6H
Diode EMCON 4 High Power Chip
FEATURES:
•
1200V EMCON 4 technology
•
soft, fast switching
•
low reverse recovery charge
•
small temperature coefficient
A
This chip is used for:
•
medium / high power modules
C
Applications:
•
medium / high power drives
Chip Type
IDC73D120T6H
V
R
I
F
Die Size
8.15 x 9.00 mm
2
Package
sawn on foil
1200V 150A
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Pad metall
Backside metall
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
8.15 x 9.00
73.35 / 59.89
7.196 x 8.046
120
150
180
187 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al,
≤500µm
∅
0.65mm; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
deg
mm
2
Edited by INFINEON Technologies, AIM PMD D CID T, L4675A, Edition 0.9, 26.06.07
IDC73D120T6H
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current limited by
T
jmax
Maximum repetitive forward current
limited by T
jmax
Maximum junction and storage
temperature
Reverse bias safe operating area
(RBSOA)
1)
2)
Symbol
V
RRM
I
F
I
FRM
T
vj,max
,
T
s t g
2)
Condition
Value
1200
1)
Unit
V
A
300
-40...+175
°C
I
F , m a x
= 300A,
V
R , m a x
= 1200V,
T
vj,op
≤
150°C,
P
m a x
=
tbd
kW
depending on thermal properties of assembly
not subject to production test - verified by design/characterisation
Static Electrical Characteristics
(tested on wafer),
T
j=25
°C
Parameter
Reverse leakage current
Cathode-Anode
breakdown Voltage
Forward voltage drop
Symbol
I
R
V
Br
V
F
Conditions
V
R
= 1 2 00V
I
R
= 0. 2 5 mA
I
F
= 15 0A
T
j
= 2 5
°
C
T
j
= 2 5 ° C
T
j
= 2 5
°
C
1200
1.55
1.9
2.25
Value
min.
Typ.
max.
26
Unit
µA
V
V
Dynamic Electrical Characteristics
inductive load
(not subject to production test - verified by design/characterization)
Parameter
Peak reverse recovery
current
Symbol
I
F
= A
Conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
Value
min.
Typ.
2)
max.
Unit
I
RM
di/dt=A/
µs
V
R
= V
V
GE
=- 1 5V
I
F
= A
tbd
A
Reverse recovery
charge
Q
r
di/dt=A/
µs
V
R
= V
V
GE
=- 1 5V
I
F
= A
tbd
µC
Reverse recovery energy
E
rec
di/dt=A/
µs
V
R
= V
V
GE
=- 1 5V
tbd
mJ
2)
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies, AIM PMD D CID T, L4675A, Edition 0.9, 26.06.07
IDC73D120T6H
CHIP DRAWING:
Edited by INFINEON Technologies, AIM PMD D CID T, L4675A, Edition 0.9, 26.06.07
IDC73D120T6H
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies, AIM PMD D CID T, L4675A, Edition 0.9, 26.06.07
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
