GBPC2508: 产品描述25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE; 产品类别分立半导体二极管; 文件大小90KB，共2页; 制造商EIC [EIC discrete Semiconductors]; 标准

下载文档详细参数选型对比全文预览

GBPC2508在线购买

供应商	器件名称	价格	最低购买	库存
	GBPC2508	-	-	点击查看	点击购买

GBPC2508概述

25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

GBPC2508规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
entfamilyid	1562429
厂商名称	EIC [EIC discrete Semiconductors]
Objectid	8329425177
包装说明	S-PUFM-D4
Reach Compliance Code	compli
compound_id	1534411
其他特性	HIGH RELIABILITY
最小击穿电压	800 V
配置	BRIDGE, 4 ELEMENTS
二极管元件材料	SILICON
二极管类型	BRIDGE RECTIFIER DIODE
JESD-30 代码	S-PUFM-D4
最大非重复峰值正向电流	300 A
元件数量	4
相数	1
端子数量	4
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	25 A
封装主体材料	PLASTIC/EPOXY
封装形状	SQUARE
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
参考标准	TS 16949
最大重复峰值反向电压	800 V
表面贴装	NO
端子形式	SOLDER LUG
端子位置	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED

文档预览

下载PDF文档

全文
预览

Certificate TH97/10561QM

Certificate TW00/17276EM

GBPC25005 - GBPC2510

PRV : 50 - 1000 Volts

Io : 25 Amperes

FEATURES :

Glass passivated junction chip

High surge current capability

High current capability

High reliability

Low reverse current

Low forward voltage drop

Pb / RoHS Free

GLASS PASSIVATED SINGLE-

PHASE BRIDGE RECTIFIERS

BR50

0.728(18.50)

0.688(17.40)

0.570(14.50)

0.530(13.40)

0.685(16.70) 1.130(28.70)

0.618(15.70) 1.120(28.40)

0.658(16.70)

0.618(15.70)

0.032(0.81)

0.028(0.71)

0.210(5.30)

0.200(5.10)

MECHANICAL DATA :

* Case : Molded plastic with heatsink integrally

mounted in the bridge encapsulation

* Epoxy : UL94V-O rate flame retardant

* Terminals : plated .25" (6.35 mm). Faston

* Polarity : Polarity symbols marked on case

* Mounting position : Bolt down on heat-sink with

silicone thermal compound between bridge

and mounting surface for maximum heat

transfer efficiency.

* Weight : 17.1 grams

0.252(6.40)

0.248(6.30)

0.100(2.50)

0.090(2.30)

0.905(23.0)

0.826(21.0)

0.310(7.87)

0.280(7.11)

Metal Heatsink

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise noted.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc = 50 °C

Peak Forward Surge Current Single Sine Wave

Superimposed on Rated Load

Rating for fusing (non-repetitive, 1ms < t < 8.3 ms)

Maximum Instantaneous Forward

Voltage Drop Per Diode

Maximum DC Reverse Current at

Rated DC Blocking Voltage Per Diode

Ta = 25 °C

Ta = 125 °C

at I

= 12.5 A

(1)

SYMBOL

RRM

RMS

F(AV)

FSM

R(H)

ӨJC

STG

GBPC GBPC GBPC GBPC GBPC GBPC GBPC

25005 2501 2502 2504 2506 2508 2510

100

200

400

600

800

1000

100

140

200

280

400

300

375

1.1

500

300

1.9

- 55 to + 150

420

600

560

800

700

1000

UNIT

sec

μA

°C/W

°C

Typical Junction Capacitance Per Diode (at 4 V, 1MHz)

Typical Thermal Resistance form Junction to Case

Operating Junction and Storage Temperature Range

Note :

(1) Unit mounted on 5 x 6 x 4.9" AL, Finned Plate.

Page 1 of 2

Rev. 00 : June 25, 2007

GBPC2508相似产品对比

	GBPC2508	GBPC2501	GBPC2504	MBR30200FCT	GBPC2502	GBPC2506	GBPC2510
描述	25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	30A SCHOTTKY BARRIER RECTIFIERS	25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
是否无铅	不含铅	不含铅	不含铅	-	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	-	符合	符合	符合
厂商名称	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	-	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
包装说明	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	-	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4
Reach Compliance Code	compli	compli	compliant	-	compliant	compli	compli
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
最小击穿电压	800 V	100 V	400 V	-	200 V	600 V	1000 V
配置	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON
二极管类型	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 代码	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4	-	S-PUFM-D4	S-PUFM-D4	S-PUFM-D4
最大非重复峰值正向电流	300 A	300 A	300 A	-	300 A	300 A	300 A
元件数量	4	4	4	-	4	4	4
相数	1	1	1	-	1	1	1
端子数量	4	4	4	-	4	4	4
最高工作温度	150 °C	150 °C	150 °C	-	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C	-55 °C
最大输出电流	25 A	25 A	25 A	-	25 A	25 A	25 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	SQUARE	SQUARE	SQUARE	-	SQUARE	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
参考标准	TS 16949	TS 16949	TS 16949	-	TS 16949	TS 16949	TS 16949
最大重复峰值反向电压	800 V	100 V	400 V	-	200 V	600 V	1000 V
表面贴装	NO	NO	NO	-	NO	NO	NO
端子形式	SOLDER LUG	SOLDER LUG	SOLDER LUG	-	SOLDER LUG	SOLDER LUG	SOLDER LUG
端子位置	UPPER	UPPER	UPPER	-	UPPER	UPPER	UPPER
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	-	1	1	-	1	-	1

GBPC2508

GBPC2508在线购买

GBPC2508概述

GBPC2508规格参数

文档预览

GBPC2508相似产品对比

推荐资源