Freescale Semiconductor
Technical Data
Document Number: MRF19045
Rev. 9, 10/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical CDMA Performance @ 1930 MHz, 26 Volts, I
DQ
= 550 mA
Multi - carrier IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: - 50 dBc @ 30 kHz BW
IM3 — - 37 dBc
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 45 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19045LR3
MRF19045LSR3
1930 - 1990 MHz, 45 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465E - 04, STYLE 1
NI - 400
MRF19045LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF19045LSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
105
0.60
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(1)
1.65
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF19045LR3 MRF19045LSR3
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 550 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
1.8
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
—
3.8
0.19
4.2
4
5
0.21
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
Functional Tests
(In Freescale Test Fixture, 50 ohm system) 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in
1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth.
Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 9.5 W Avg, 2 - Carrier N - CDMA,
I
DQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 9.5 W Avg, 2 - Carrier N - CDMA,
I
DQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 9.5 W Avg, 2 - Carrier N - CDMA,
I
DQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz; IM3 Measured in
a 1.2288 MHz Integrated Bandwidth Centered at f1 - 2.5 MHz and
f2 +2.5 MHz, Referenced to the Carrier Channel Power)
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 9.5 W Avg, 2-carrier N-CDMA, I
DQ
= 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz; ACPR measured in a 30 kHz
Integrated Bandwith Centered at f1 - 885 kHz and f2 +885 kHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 9.5 W Avg, 2 - Carrier N - CDMA,
I
DQ
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, I
DQ
= 550 mA, f = 1930 MHz)
1. Part is internally matched both on input and output.
G
ps
13
14.5
—
dB
η
21
23.5
—
%
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 45
dBc
IRL
—
- 16
-9
dB
P1dB
—
45
—
W
MRF19045LR3 MRF19045LSR3
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
R2
V
BIAS
+
C1
+
C2
C3
R1
B1
R3
W1
Z4
C4
C6
Z8
C7
C8
R4
W2
+
C9
+
R5
B2
B2
C10
C11
V
SUPPLY
+
C12
Z3
Z6
RF
INPUT
Z7
Z9
Z10
C13
Z11
RF
OUTPUT
Z1
C5
Z2
Z5
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6
Z7
1.336″
0.693″
1.033″
0.468″
0.271″
0.263″
1.165″
x 0.081″
x 0.081″
x 0.047″
x 0.047″
x 0.460″
x 0.930″
x 0.047″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z8
Z9
Z10
Z11
PCB
0.216″ x 0.047″ Microstrip
0.519″ x 0.254″ Microstrip
0.874″ x 0.081″ Microstrip
0.645″ x 0.081″ Microstrip
Arlon GX0300-55-22, 30 mils,
ε
r
= 2.55
NOTE: Z3, Z4, Z7, Z8 lengths and component placement tolerances are
±0.050″.
Zx lengths are microstrip lengths between components, center-line to center-line.
All component and z-length tolerances are
±0.015″,
except as noted.
Figure 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic
Table 5. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values
Designators
B1, B2
C1, C2
C3, C11
C4, C8
C5
C6, C7
C9, C10, C12
C13
R1
R2, R3, R4, R5
W1, W2
WS1, WS2
Description
0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446
10
mF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394
0.1
mF
Chip Capacitors, Kemet #CDR33BX104AKWS
24 pF Chip Capacitors, ATC #100B240JP500X
470 pF Chip Capacitor, ATC #100B471JP200X
11 pF Chip Capacitors, ATC #100B110JP500X
22
mF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
8.2 pF Chip Capacitor, ATC #100B8R2CP500X
560 kΩ, 1/4 W Chip Resistor (0.08″ x 0.13″)
8.2
Ω,
1/4 W Chip Resistors (0.08″ x 0.13″), Garrett Instruments #RM73B2B110JT
Solid Copper Buss Wire, 16 AWG
Beryllium Copper Wear Blocks (0.005″ x 0.150″ x 0.350″) Nominal
MRF19045LR3 MRF19045LSR3
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
C1
R1
B1
R2
C3
C5
C4
W1
R3
C6
C7
C8
W2
R4
C9 C10
C12
B2
R5
C11
C2
WS1
ARCHIVE INFORMATION
WS2
C13
MRF19045/S
Rev - 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout
MRF19045LR3 MRF19045LSR3
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
η
, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
40
35
30
25
20
15
10
5
0
1
2
3
4
5
6
7
8
9
10
11
12
P
out
, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
V
DD
= 26 Vdc
I
DQ
= 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
−30
−35
IM3
η
ACPR
G
ps
−55
−60
−65
−70
IM3 (dBc), ACPR (dBc)
−40
−45
−50
35
30
25
η
−30
IM3
−40
G
ps
−50
ACPR
5
1900
1930
1960
1990
2020
f, FREQUENCY (MHz)
−60
20
15
10
0
IM3 (dBc), ACPR (dBc), IRL (dB)
−10
−20
V
DD
= 26 Vdc, I
DQ
= 550 mA 2.5 MHz Carrier Spacing
1.2288 MHz Source Channel Bandwidth
9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%)
IRL
ARCHIVE INFORMATION
Figure 3. 2-Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
−30
V
DD
= 26 Vdc
I
DQ
= 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
350 mA
450 mA
−45
550 mA
700 mA
−50
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%)
0
1
2
3
4
5
6
7
8
9
10
11
12
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL
and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
−45
−50
V
DD
= 26 Vdc
I
DQ
= 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
350 mA
450 mA
−60
700 mA
−65
550 mA
0
1
2
3
4
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%
Probability) (CCDF)
5
6
7
8
9
10
11
−35
−40
−55
−55
P
out
, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
−70
12
P
out
, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 5. 2-Carrier N-CDMA IM3
versus Output Power
η
, DRAIN EFFICIENCY (%), Pout , OUTPUT POWER (WATTS CW)
15.5
700 mA
15.0
550 mA
450 mA
14.5
350 mA
V
DD
= 26 Vdc, I
DQ
= 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
14.0
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF)
0
1
2
3
4
5
6
7
8
9
10
11
12
70
60
50
40
30
20
10
0
0.0
0.5
Figure 6. 2-Carrier N-CDMA ACPR
versus Output Power
17
P 1dB
P out
P 3dB
η
15
14
13
Gps
V
DD
= 26 Vdc
I
DQ
= 550 mA
f = 1960 MHz
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
12
11
10
P
in
, INPUT POWER (WATTS CW)
16
G ps , POWER GAIN (dB)
13.5
P
out
, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 7. 2-Carrier N-CDMA Power Gain
versus Output Power
Figure 8. CW Output Power, Power Gain and Drain
Efficiency versus Input Power
MRF19045LR3 MRF19045LSR3
RF Device Data
Freescale Semiconductor
G ps , POWER GAIN (dB)
5
ARCHIVE INFORMATION
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
嵌入式系统
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