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GS8342T09BD-350T

产品描述DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, BGA-165
产品类别存储    存储   
文件大小488KB,共35页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
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GS8342T09BD-350T概述

DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, BGA-165

GS8342T09BD-350T规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称GSI Technology
零件包装代码BGA
包装说明LBGA, BGA165,11X15,40
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间0.45 ns
其他特性PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)350 MHz
I/O 类型COMMON
JESD-30 代码R-PBGA-B165
长度15 mm
内存密度37748736 bit
内存集成电路类型DDR SRAM
内存宽度9
功能数量1
端子数量165
字数4194304 words
字数代码4000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织4MX9
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源1.5/1.8,1.8 V
认证状态Not Qualified
座面最大高度1.4 mm
最大待机电流0.21 A
最小待机电流1.7 V
最大压摆率0.565 mA
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度13 mm

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GS8342T08/09/18/36BD-400/350/333/300/250
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36, x18 and x9) and Nybble Write (x8) function
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb
devices
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
36Mb SigmaDDR-II
TM
Burst of 2 SRAM
400 MHz–250 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Each internal read and write operation in a SigmaDDR-II B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed.
When a new address is loaded into a x18 or x36 version of the
part, A0 is used to initialize the pointers that control the data
multiplexer / de-multiplexer so the RAM can perform "critical
word first" operations. From an external address point of view,
regardless of the starting point, the data transfers always follow
the same sequence {0, 1} or {1, 0} (where the digits shown
represent A0).
Unlike the x18 and x36 versions, the input and output data
multiplexers of the x8 and x9 versions are not preset by
address inputs and therefore do not allow "critical word first"
operations. The address fields of the x8 and x9 SigmaDDR-II
B2 RAMs are one address pin less than the advertised index
depth (e.g., the 4M x 8 has a 2M addressable index, and A0 is
not an accessible address pin).
SigmaDDR™ Family Overview
The GS8342T08/09/18/36BD are built in compliance with the
SigmaDDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 37,748,736-bit (36Mb)
SRAMs. The GS8342T08/09/18/36BD SigmaDDR-II SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS8342T08/09/18/36BD SigmaDDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
Parameter Synopsis
-400
tKHKH
tKHQV
2.5 ns
0.45 ns
-350
2.86 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
Rev: 1.02 6/2012
1/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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