Freescale Semiconductor
Technical Data
Document Number: MD7IC2050N
Rev. 1, 5/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC2050N wideband integrated circuit is designed with on- chip
matching that makes it usable from 1750- 2050 MHz. This multi- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
•
Typical Doherty Single-Carrier W-CDMA Performance: V
DD
= 28 Volts,
I
DQ1A
= I
DQ1B
= 30 mA, I
DQ2A
= 230 mA, V
GS2B
= 1.4 Vdc, P
out
= 10 Watts
Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
2025 MHz
G
ps
(dB)
30.5
PAE
(%)
34.7
Output PAR
(dB)
8.7
ACPR
(dBc)
-37.4
MD7IC2050NR1
MD7IC2050GNR1
MD7IC2050NBR1
1880-2100 MHz, 10 W AVG., 28 V
SINGLE W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 79 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 20 Watts to 80 Watts
CW P
out
•
Typical P
out
@ 3 dB Compression Point
]
74 Watts CW
1880 MHz
•
Typical Doherty Single-Carrier W-CDMA Performance: V
DD
= 28 Volts,
I
DQ1A
= I
DQ1B
= 30 mA, I
DQ2A
= 230 mA, V
GS2B
= 1.4 Vdc, P
out
= 10 Watts
Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
1880 MHz
1900 MHz
1920 MHz
G
ps
(dB)
30.3
30.2
30.1
PAE
(%)
35.2
34.9
34.8
Output PAR
(dB)
8.6
8.6
8.7
ACPR
(dBc)
-34.9
-36.3
-36.9
CASE 1618-02
TO-270 WB-14
PLASTIC
MD7IC2050NR1
CASE 1621-02
TO-270 WB-14 GULL
PLASTIC
MD7IC2050GNR1
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Production Tested in a Symmetrical Doherty Configuration
•
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
•
On-Chip Matching (50 Ohm Input, DC Blocked)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
CASE 1617-02
TO-272 WB-14
PLASTIC
MD7IC2050NBR1
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2009-2010. All rights reserved.
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1
1
RF Device Data
Freescale Semiconductor
V
DS1A
RF
inA
CARRIER
(2)
RF
out1
/V
DS2A
V
GS1A
V
GS2A
V
GS1B
V
GS2B
Quiescent Current
Temperature Compensation
(1)
Quiescent Current
Temperature Compensation
(1)
PEAKING
(2)
V
DS1A
V
GS2A
V
GS1A
RF
inA
NC
NC
NC
NC
RF
inB
V
GS1B
V
GS2B
V
DS1B
1
2
3
4
5
6
7
8
9
10
11
12
14
RF
out1
/V
DS2A
13
RF
out2
/V
DS2B
RF
inB
V
DS1B
RF
out2
/V
DS2B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
2. Peaking and Carrier orientation is determined by the test fixture design.
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
-0.5, +65
-0.5, +10
32, +0
-65 to +150
150
225
28
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Final Doherty Application
Thermal Resistance, Junction to Case
Case Temperature 81°C, P
out
= 50 W CW
Stage 1A, 28 Vdc, I
DQ1A
= 30 mA
Stage 1B, 28 Vdc, I
DQ1B
= 30 mA
Stage 2A, 28 Vdc, I
DQ2A
= 230 mA
Stage 2B, 28 Vdc, V
GS2B
= 1.4 Vdc
Case Temperature 73°C, P
out
= 10 W CW
Stage 1A, 28 Vdc, I
DQ1A
= 30 mA
Stage 1B, 28 Vdc, I
DQ1B
= 30 mA
Stage 2A, 28 Vdc, I
DQ2A
= 230 mA
Stage 2B, 28 Vdc, V
GS2B
= 1.4 Vdc
R
θJC
8.2
8.2
1.8
1.8
8.3
8.3
1.9
1.9
°C/W
Symbol
Value
(2,3)
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1
2
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Class
0 (Minimum)
A (Minimum)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22-A113, IPC/JEDEC J-STD-020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 - Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate-Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 - On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 23
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1A
= I
DQ1B
= 30 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 30 mAdc, Measured in Functional Test)
Stage 2 - Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate-Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 - On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2A
= 230 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2A
= 230 mAdc, Measured in Functional Test)
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4.1
0.1
2
3
5.5
0.3
2.7
—
7.1
1.2
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
4.1
1.9
3
5.5
2.7
—
7.1
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3,4)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 30 mA, I
DQ2A
= 230 mA,
V
GS2B
= 1.4 Vdc, P
out
= 10 W Avg., f = 2025 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
1.
2.
3.
4.
G
ps
PAE
PAR
ACPR
28.5
32.0
8.0
—
30.5
34.7
8.7
-37.4
33.0
—
—
-34.0
dB
%
dB
dBc
Each side of device measured separately.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(1)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 30 mA, I
DQ2A
= 230 mA,
V
GS2B
= 1.4 Vdc, 2010-2025 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point, CW
IMD Symmetry @ 30 W PEP, P
out
where IMD Third Order
Intermodulation
`
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
with 4.7 kΩ Gate Feed Resistors (-30 to 85°C)
(2)
Gain Flatness in 15 MHz Bandwidth @ P
out
= 10 W Avg.
Gain Variation over Temperature
(-30
°C
to +85°C)
Output Power Variation over Temperature
(-30
°C
to +85°C)
P1dB
P3dB
IMD
sym
—
55
—
—
—
60
74
—
—
W
W
MHz
VBW
res
ΔI
QT
G
F
ΔG
ΔP1dB
—
—
—
—
—
70
2.64
0.1
0.033
0.008
—
—
—
—
—
MHz
%
dB
dB/°C
dBm/°C
Typical W-CDMA Broadband Performance — 1880 MHz
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
=
30 mA, I
DQ2A
= 230 mA, V
GS2B
= 1.4 Vdc, P
out
= 10 W Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
1880 MHz
1900 MHz
1920 MHz
G
ps
(dB)
30.3
30.2
30.1
PAE
(%)
35.2
34.9
34.8
Output PAR
(dB)
8.6
8.6
8.7
ACPR
(dBc)
-34.9
-36.3
-36.9
IRL
(dB)
-21
-21
-22
1. Measurement made with device in a Symmetrical Doherty configuration.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.Select Documentation/Application Notes - AN1977 or
AN1987.
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1
4
RF Device Data
Freescale Semiconductor
V
GS1A
V
GS2A
V
DS1A
C1
C7
V
DS2A
R2
R1
C11
C17
C9
C15
C3
C18
C4
CUT OUT AREA
Z1
R5
C
C13
P
C14
C12
R3
R4
C19
C20
C5
C10
C8
C16
C6
C21
MD7IC2050N
Rev. 1
V
DS2B
C2
V
GS1B
V
GS2B
V
DS1B
Figure 3. MD7IC2050NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MD7IC2050NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
C1, C2, C3, C4, C5, C6
C7, C8
C9, C10
C11, C12, C13, C14
C15, C16, C17, C18, C19, C20
C21
R1, R2, R3, R4
R5
Z1
PCB
Description
10
μF,
50 V Chip Capacitors
4.7 pF Chip Capacitors
5.6 pF Chip Capacitors
39 pF Chip Capacitors
4.7
μF,
50 V Chip Capacitors
1.0 pF Chip Capacitor
4.7 kΩ, 1/4 W Chip Resistors
50
Ω,
1/4 W Thick Film Chip Resistor
1900 MHz Band 90°, 3 dB Hybrid Coupler
0.020″,
ε
r
= 3.5
Part Number
GRM55DR61H106KA88L
ATC600F4R7BT250XT
ATC600F5R6BT250XT
ATC600F390JT250XT
GRM31CR71H475KA12L
ATC600F1R0BT250XT
CRCW12064701KEA
RK73B2BTTD510J
GSC351-HYB1900
RF-35
Manufacturer
Murata
ATC
ATC
ATC
Murata
ATC
Vishay
KOA Speer
Soshin
Taconic
MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1
RF Device Data
Freescale Semiconductor
5
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