SMBTA14/MMBTA14
NPN Silicon Darlington Transistor
•
High collector current
•
Low collector-emitter saturation voltage
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
Type
SMBTA14/MMBTA14
Marking
s1N
1=B
Pin Configuration
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
S
≤
81 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
Pb-containing
Symbol
V
CES
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
Value
30
30
10
300
500
100
200
330
150
-65 ... 150
Value
≤
210
Unit
V
mA
mW
°C
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19
SMBTA14/MMBTA14
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-base breakdown voltage
V
(BR)CBO
30
-
-
V
I
C
= 10 µA,
I
E
= 0
Collector-emitter breakdown voltage
I
C
= 10 µA,
V
BE
= 0
V
(BR)CES
V
(BR)EBO
I
CBO
30
10
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
EBO
h
FE
-
-
-
0.1
10
100
nA
-
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
-
DC current gain
1)
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 100 mA,
V
CE
= 5 V
10000
20000
V
CEsat
V
BEsat
-
-
-
-
-
-
1.5
2
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
-
-
Base emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 100 MHz
1
Pulse
f
T
C
cb
125
-
-
3
-
-
MHz
pF
test: t < 300µs; D < 2%
2
2007-04-19
SMBTA14/MMBTA14
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 5 V
10
6
h
FE
5
SMBTA 13/14
EHP00829
Collector-emitter saturation voltage
I
C
=
ƒ
(V
CEsat
),
h
FE
= 1000
10
3
SMBTA 13/14
EHP00826
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
10
5
5
125 ˚C
25 ˚C
10
2
5
-55 ˚C
10
4
5
10
1
5
10
3
10
-1
10
0
10
1
10
2
mA 10
3
10
0
0
0.5
1.0
V
V
CEsat
1.5
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ
(V
BEsat
),
h
FE
= 1000
10
3
mA
SMBTA 13/14
EHP00827
Collector cutoff current
I
CBO
=
ƒ
(T
A
)
V
CBO
= 30 V
4
SMBTA 13/14
EHP00828
10
nA
Ι
C
150 ˚C
25 ˚C
-50 ˚C
Ι
CB0
10
3
5
typ
max
10
2
5
10
5
10
1
5
2
10
1
5
10
0
0
1.0
2.0
V
V
BEsat
3.0
10
0
0
50
100
T
A
˚C
150
3
2007-04-19
SMBTA14/MMBTA14
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= 5 V,
f
= 200 MHz
10
3
MHz
f
T
5
C
CB
/C
EB
15
13
11
SMBTA 13/14
EHP00825
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(V
EB
)
19
pF
10
2
CEB
9
5
7
5
3
CCB
10
1
10
0
5 10
1
5 10
2
mA
10
3
1
0
4
8
12
16
V
22
Ι
C
V
CB
/V
EB
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
360
10
3
P
tot max
5
P
tot DC
SMBTA 13/14
EHP00824
mW
300
270
t
p
D
=
T
t
p
T
P
tot
240
210
180
150
120
90
60
30
0
0
15
30
45
60
75
90 105 120
10
2
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
°C
150
T
S
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
4
2007-04-19
Package SOT23
SMBTA14/MMBTA14
Package Outline
0.15 MIN.
1
±0.1
0.1 MAX.
1.3
±0.1
2.9
±0.1
3
B
2.4
±0.15
10˚ MAX.
1)
0.4
+0.1
-0.05
1
2
10˚ MAX.
C
0.95
1.9
0.08...0.1
A
5
0...8˚
0.25
M
B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH
s
Pin 1
0.9
1.3
2005, June
Date code (YM)
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.9
2.13
2.65
0.2
8
Pin 1
3.15
1.15
5
2007-04-19
微控制器 MCU
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