SIGC25T60SNC
IGBT Chip in NPT-technology
FEATURES:
•
600V NPT technology
•
100µm chip
•
short circuit prove
•
positive temperature coefficient
•
easy paralleling
C
This chip is used for:
•
SGP30N60
Applications:
•
drives
G
E
Chip Type
SIGC25T60SNC
SIGC25T60SNC
V
CE
600V
600V
I
Cn
30A
30A
Die Size
4.5 x 5.71 mm
2
4.5 x 5.71 mm
2
Package
sawn on foil
unsawn
Ordering Code
Q67041-A4667-
A001
Q67041-A4667-
A002
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
4.5 x 5.71
25.7 / 21.4
2x( 2.18x1.58 )
0.68 x 1.08
100
150
90
566
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al,
≤500µm
∅
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
deg
mm
2
Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003
SIGC25T60SNC
MAXIMUM RATINGS:
Parameter
Collector-emitter voltage,
T
j=25
°C
DC collector current, limited by T
jmax
Pulsed collector current, t
p
limited by T
jmax
Gate emitter voltage
Operating junction and storage temperature
1)
Symbol
V
CE
I
C
I
cpuls
V
GE
T
j
, T
s t g
Value
600
1)
Unit
V
A
A
V
°C
90
±20
-55 ... +150
depending on thermal properties of assembly
STATIC CHARACTERISTICS
(tested on chip),
T
j=25
°C,
unless otherwise specified:
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Symbol
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
Conditions
min.
V
GE
=0V, I
C
=500µA
V
GE
=15V, I
C
=30A
I
C
=700µA, V
GE
=V
CE
V
CE
=600V, V
GE
=0V
V
CE
=0V, V
GE
=20V
600
1.6
3
2
4
2.5
5
2.2
120
µA
nA
V
Value
typ.
max.
Unit
DYNAMIC CHARACTERISTICS
(tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
C
i s s
C
o s s
C
r s s
Conditions
V
C E
= 2 5 V
V
GE
= 0 V
f
=1MHz
Value
min.
-
-
-
typ.
1600
150
92
max.
1920
180
110
Unit
pF
SWITCHING CHARACTERISTICS
(tested at component), Inductive Load:
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
2)
Symbol
t
d(on)
t
r
t
d(off)
t
f
Conditions
T
j
= 1 5 0
°
C
V
C C
=400V
I
C
=30A
V
G E
=+15/0V
R
G
= 1 1Ω
2)
Value
min.
-
-
-
-
typ.
44
34
324
67
max.
53
40
389
80
Unit
ns
switching conditions different to 600V Standard IGBT 2, under comparable switching conditions 40% faster
turnoff than Standard IGBT 2. V
alues also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003
SIGC25T60SNC
CHIP
DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003
SIGC25T60SNC
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
SGP30N60
Package :TO220
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 7262-S, Edition 2, 28.11.2003
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