PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
55 W, 869 – 960 MHz
Description
The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs
designed for EDGE and CDMA power amplifier applications in the
869 to 960 MHz band. Features include input matching and thermally-
enhanced packages with slotted or earless flanges. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA080551E
Package H-36265-2
PTFA080551F
Package H-37265-2
Three-carrier CDMA2000 Performance
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 960 MHz
Features
•
•
-35
-40
-45
Broadband internal matching
Typical EDGE performance
- Average output power = 26 W
- Gain = 18 dB
- Efficiency = 44%
Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 17 dB
- Efficiency = 67%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 55 W
(CW) output power
Pb-free and RoHS compliant
40
35
Adj. Ch. Power Ratio (dBc)
Efficiency
Drain Efficiency (%)
30
25
•
ACP Low
20
15
10
5
0
29
31
33
35
37
39
41
43
-50
-55
-60
ACP Up
ALT Up
•
•
•
•
-65
-70
Output Power, Avg. (dBm)
RF Characteristics
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 26 W AVG, ƒ = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
2.5
–60
–75
18
44
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
η
D
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
= 55 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
18
46.5
—
Typ
18.5
48
–31
Max
—
—
–29
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.15
2.3
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
V
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 450 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
219
1.25
–40 to +150
0.8
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA080551E
PTFA080551F
V4
V4
Package Outline
H-36265-2
H-37265-2
Package Description
Thermally-enhanced,
slotted flange, single-ended
Thermally-enhanced,
earless flange, single-ended
Shipping
Tray
Tray
Marking
PTFA080551E
PTFA080551F
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V
DD
= 28 V, ƒ = 959.8 MHz, P
OUT
= 22 W
2.1
1.9
-20
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 959.8 MHz
0
55
Modulation Spectrum (dBc)
EVM
-30
-40
-50
Modulation Spectrum (dBc)
Efficiency
Drain Efficiency (%)
-20
-40
45
35
EVM RMS (avg. %)
.
1.7
1.5
1.3
1.1
0.9
0.7
0.35
400 kHz
-60
-70
400 kHz
-60
-80
25
15
5
32
34
36
38
40
42
44
46
600 kHz
0.40
0.45
0.50
0.55
-80
600 kHz
-90
0.60
-100
Quiescent Current (A)
Output Power (dBm)
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 959.8 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 450 mA, ƒ
1
= 959 MHz, ƒ
2
= 960 MHz
55
45
35
25
15
5
-20
-30
10
8
6
4
2
0
32
34
36
38
40
42
44
46
EVM RMS (avg. %)
.
Drain Efficiency (%)
IMD (dBc)
Efficiency
-40
-50
3rd Order
5th
-60
EVM
7th
-70
30
33
36
39
42
45
48
Output Power (dBm)
Output Power, Avg. (dBm)
Data Sheet
3 of 11
Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, ƒ
1
= 959, ƒ
2
= 960 MHz
Linear Broadband Performance
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
Avg = 44.39 dBm
-20
51
40
30
-30
Efficiency (%)
IMD (dBc)
300 mA
450 mA
Gain
49
48
47
46
45
20
10
0
-10
-20
Efficiency
-40
-50
Return Loss
-60
29
31
33
35
37
39
41
43
45
47
44
860
880
900
920
940
-30
960
Output Power, Avg. (dBm)
Frequency (MHz)
Power Sweep
V
DD
= 28 V, ƒ = 960 MHz
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 600 mA, ƒ = 960 MHz
19
21
70
60
I
DQ
= 600 mA
Power Gain (dB)
18
20
19
Gain
50
40
18
17
16
15
30
17
I
DQ
= 450 mA
16
I
DQ
= 300 mA
Efficiency
20
10
15
36
38
40
42
44
46
48
50
14
36
38
40
42
44
46
48
50
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 03, 2008-10-22
Drain Efficiency (%)
Gain (dB)
Gain, Return Loss (dB)
600 mA
50
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Output Power
(P–1dB)
vs. Drain Voltage
I
DQ
= 600 mA, ƒ = 960 MHz
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 960 MHz
T
CASE
= 25°C
45
40
51
50
T
CASE
= 90°C
Efficiency
0
Output Power (dBm)
49
48
47
46
45
24
26
28
30
32
Drain Efficiency (%)
35
30
25
20
15
10
5
0
29
31
33
35
37
39
41
43
-20
-30
ACP FC – 0.75 MHz
-40
-50
-60
-70
ACPR FC + 1.98 MHz
-80
-90
Drain Voltage (V)
Output Power, Avg. (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.778 A
1.03
1.55 A
3.11 A
3.88 A
4.66 A
5.44 A
0.99
0.98
0.97
0.96
-20
0
20
40
60
80
100
6.22 A
7.00 A
Normalized Bias Voltage (V)
1.02
1.01
1.00
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 03, 2008-10-22
Adj. Ch. Power Ratio (dBc)
-10
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