BUR52
MECHANICAL DATA
Dimensions in mm(inches)
HIGH CURRENT
NPN SILICON
TRANSISTOR
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
FEATURES
• FAST SWITCHING
• HIGH PULSE POWER
22.23
(0.875)
max.
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
1.47 (0.058)
1.60 (0.063)
APPLICATIONS
• POWER SWITCHING CIRCUITS
• MOTOR CONTROL
TO3 (TO204AE)
Pin 1 = Base
Pin 2 = Emitter Case = Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg,
T
j
R
θJC
Collector – Base Voltage (I
E
= 0V)
Collector – Emitter Voltage (I
B
= 0V)
Collector – Emitter Voltage (I
C
= 0V)
Collector Current
Peak Collector Current (t
p
= 10 ms)
Base Current
Total Power Dissipation at T
case
≤
25°C
Storage Temperature
Max. Operating Junction Temperature
Junction to Case Thermal Resistance
350V
250V
10V
60A
80A
16A
350W
-65°C to +200°C
200°C
0.5°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5764
Issue 2
BUR52
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)
*
V
(BR)EBO
I
CEO
I
CBO
I
EBO
V
CE(sat)*
V
BE(sat)*
I
S/b
f
t
t
on
t
f
t
s
Collector - Emitter Sustaining
Voltage
Emitter – Base Breakdown
Voltage
Collector Emitter Cut-off
Current
Collector -Base Cut-off Current
Emitter–Base Cut-off Current
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
Second Breakdown
Collector Current
Transition Frequency
Turn–On Time
Fall Time
Storage Time
I
C
= 0
V
CE
= 250V
V
CE
= 350V
I
E
= 10mA
I
B
= 0
I
E
= 0
T
C
= 125°C
I
C
= 0
I
C
= 25A
I
C
= 40A
I
C
= 25A
I
C
= 40A
V
CE
= 20V
I
C
= 1A
f = 1MHz
I
C
= 40A
V
CC
= 100V
I
C
= 40A
I
B2
- 4A
I
C
= 40A
I
B2
- 4A
I
B1
=4A
V
CC
= 100V
I
B1
=4A
V
CC
= 100V
I
B
= 4A
V
EB
= 7V
I
B
= 2A
I
B
= 4A
I
B
= 2A
I
B
= 4A
t = 1s
V
CE
= 5V
17.5
10
0.3
0.2
1.2
16
1
0.6
2
µs
1.5
0.7
Test Conditions
I
C
= 200mA
I
B
= 0
Min.
250
10
Typ.
Max. Unit
V
V
1
0.2
2
0.2
1
1.5
1.8
2
mA
mA
µA
V
V
A
MHz
*Pulsed tp =300
µs
@< 1%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5764
Issue 2
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