Pb Free Product
http://www.ncepower.com
NCE2305
NCE
P-Channel
Enhancement Mode Power MOSFET
DESCRIPTION
The NCE2305 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
S
G
D
GENERAL FEATURES
●
V
DS
= -8V,I
D
= -4.1A
R
DS(ON)
< 118mΩ @ V
GS
=-1.8V
R
DS(ON)
<81mΩ @ V
GS
=-2.5V
R
DS(ON)
< 68mΩ @ V
GS
=-4.5V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●PWM
applications
●Load
switch
●Power
management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
2305
Device
NCE2305
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current -Continuous
I
D
Drain Current -Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
-8
±8
-4.1
-15
1.7
-55 To 150
Unit
V
V
A
A
W
℃
74
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=-250μA
Min
-8
Typ
Max
Unit
V
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
Pb Free Product
http://www.ncepower.com
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
V
GS
=0V,I
S
=-1.6A
V
DS
=-4V,I
D
=-4.1A,V
GS
=-4.5V
V
DD
=-4V,I
D
=-3.3A ,
R
L
=-1.2Ω,V
GEN
=-4.5V,R
g
=1Ω
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-3.5A
V
GS
=-2.5V, I
D
=-3A
V
GS
=-1.8V, I
D
=-2A
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
DS
=-4V,V
GS
=0V,
F=1.0MHz
V
DS
=-5V,I
D
=-3.5A
I
DSS
I
GSS
V
DS
=-8V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
NCE2305
-1
±100
-0.45
42
55
-1.0
68
81
118
8.5
740
290
190
12
35
30
10
7.8
1.2
1.6
-1.2
1.6
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
mΩ
μA
nA
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
Pb Free Product
http://www.ncepower.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
t
d(on)
t
on
t
r
90%
NCE2305
t
off
t
f
90%
t
d(off)
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
I
D
- Drain Current (A）
P
D
Power(W)
T
J
-Junction Temperature(℃)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
Pb Free Product
http://www.ncepower.com
NCE2305
Normalized On-Resistance
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(Ω)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
v1.0
Pb Free Product
http://www.ncepower.com
NCE2305
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13
r(t),Normalized Effective
Transient Thermal Impedance
Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
