Silicon Controlled Rectifier, 0.8A I(T)RMS, 150V V(RRM), 1 Element, TO-18
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 配置 | SINGLE |
| 最大直流栅极触发电流 | 0.2 mA |
| JEDEC-95代码 | TO-18 |
| JESD-30 代码 | O-MBCY-W3 |
| JESD-609代码 | e3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 峰值回流温度（摄氏度） | 260 |
| 认证状态 | Not Qualified |
| 最大均方根通态电流 | 0.8 A |
| 重复峰值反向电压 | 150 V |
| 表面贴装 | NO |
| 端子面层 | MATTE TIN (315) |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 10 |
| 触发设备类型 | SCR |
| Base Number Matches | 1 |
| 器件名 | 厂商 | 描述 |
|---|---|---|
| 2N880 | Central Semiconductor | 0.8 A, 60 V, SCR, TO-92 |
| 2N3027 | Digitron | Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.0001; Capacitance: 5; Package: TO-18 |
| 2N2328 | SSDI | Silicon Controlled Rectifier, 2.5A I(T)RMS, 1600mA I(T), 300V V(DRM), 1 Element, TO-5, TO-5, 3 PIN |
| 2N6396 | Advanced Semiconductor, Inc. | Silicon Controlled Rectifier, 5000mA I(T), 200V V(DRM) |
| 2N6402 | Toshiba(东芝) | SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220 |
| C126F | Semitronics Corp | Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN |
| BT151X-650R,127 | WeEn Semiconductors | Silicon Controlled Rectifier, 12A I(T)RMS, 650V V(DRM), 650V V(RRM), 1 Element, TO-220AB, PLASTIC, TO-220F, FULL PACK-3 |
| 2N1772A | SSDI | Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 1 Element, TO-64, TO-64, 2 PIN |
| 2N1776A | Advanced Semiconductor, Inc. | Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 1 Element, TO-64, TO-64, 2 PIN |
| 2N879 | Advanced Semiconductor, Inc. | Silicon Controlled Rectifier, 0.55A I(T)RMS, 350mA I(T), 100V V(DRM), 1 Element, TO-18, TO-18, 3 PIN |
| 2N1880 | Digitron | Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-5 |
| C15F | Semitronics Corp | Silicon Controlled Rectifier, 8A I(T)RMS, 3000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-64 |
| MCR718 | Central Semiconductor | SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS |
| 2N2327 | New Jersey Semiconductor | Thyristor SCR 250V 15A 3-Pin TO-39 |
| C106E1 | Central Semiconductor | 4 A, 400 V, SCR, TO-202 |
| 2N1772 | Semitronics Corp | Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-64 |
| CS29-08IO1C | IXYS | Silicon Controlled Rectifier, 35A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, PLASTIC, ISOPLUS220, 3 PIN |
| S2025L | Littelfuse | SCRs 25A 200V |
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