Datasheet> 器件分类 > 分立半导体> 晶体管> SIHFR214TR-GE3

SIHFR214TR-GE3: 产品描述TRANSISTOR 2.2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power; 产品类别分立半导体晶体管; 文件大小860KB，共11页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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SIHFR214TR-GE3概述

TRANSISTOR 2.2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power

SIHFR214TR-GE3规格参数

参数名称	属性值
厂商名称	Vishay(威世)
零件包装代码	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
雪崩能效等级（Eas）	190 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	250 V
最大漏极电流 (Abs) (ID)	2.2 A
最大漏极电流 (ID)	2.2 A
最大漏源导通电阻	2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252AA
JESD-30 代码	R-PSSO-G2
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	25 W
最大脉冲漏极电流 (IDM)	8.8 A
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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IRFR214, IRFU214, SiHFR214, SiHFU214

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

FEATURES

250

= 10 V

8.2

1.8

4.5

Single

2.0

•

Dynamic dV/dt Rating

Repetitive Avalanche Rated

Surface Mount (IRFR214, SiHFR214)

Straight Lead (IRFU214, SiHFU214)

Available in Tape and Reel

Fast Switching

Ease of Paralleling

Material categorization: For definitions of

compliance please see

www.vishay.com/doc?99912

DPAK

(TO-252)

IPAK

(TO-251)

Note

Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

DESCRIPTION

D S

N-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SnPb

Note

a. See device orientation.

DPAK (TO-252)

SiHFR214-GE3

IRFR214PbF

SiHFR214-E3

IRFR214

SiHFR214

DPAK (TO-252)

SiHFR214TRL-GE3

IRFR214TRLPbF

SiHFR214TL-E3

DPAK (TO-252)

SiHFR214TR-GE3

IRFR214TRPbF

SiHFR214T-E3

IRFR214TR

SiHFR214T

DPAK (TO-252)

SiHFR214TRR-GE3

IRFR214TRR

SiHFR214TR

IPAK (TO-251)

SiHFU214-GE3

IRFU214PbF

SiHFU214-E3

IRFU214

SiHFU214

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Current

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

250

± 20

2.2

1.4

8.8

0.20

0.020

190

2.2

2.5

4.8

- 55 to + 150

260

UNIT

Pulsed Drain

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energyb

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

= 25 °C

Maximum Power Dissipation (PCB Mount)

= 25 °C

Peak Diode Recovery dV/dtc

dV/dt

Operating Junction and Storage Temperature Range

, T

stg

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, Starting T

= 25 °C, L = 62 mH, R

= 25

,

= 2.2 A (see fig. 12).

c. I



2.2 A, dI/dt



65 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 Material).

S12-1426-Rev. D, 18-Jun-12

W/°C

V/ns

°C

Document Number: 91269

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHFR214TR-GE3相似产品对比

	SIHFR214TR-GE3	SIHFR214TRR-GE3	SIHFR214TRL-GE3	SIHFR214-GE3	SIHFU214-GE3
描述	TRANSISTOR 2.2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power	TRANSISTOR 2.2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power	TRANSISTOR 2.2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power	TRANSISTOR 2.2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power	TRANSISTOR 2.2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, IPAK-3, FET General Purpose Power
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)
零件包装代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-251AA
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
针数	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	190 mJ	190 mJ	190 mJ	190 mJ	190 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	250 V	250 V	250 V	250 V	250 V
最大漏极电流 (Abs) (ID)	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A
最大漏极电流 (ID)	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A
最大漏源导通电阻	2 Ω	2 Ω	2 Ω	2 Ω	2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-251AA
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3
元件数量	1	1	1	1	1
端子数量	2	2	2	2	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	25 W	25 W	25 W	25 W	25 W
最大脉冲漏极电流 (IDM)	8.8 A	8.8 A	8.8 A	8.8 A	8.8 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	NO
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON

SIHFR214TR-GE3

SIHFR214TR-GE3概述

SIHFR214TR-GE3规格参数

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