Data Sheet
PT7C5002L series
Crystal Oscillator Module ICs
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Features
•
•
•
•
•
•
•
Oscillation frequency up to 100 MHz
Third harmonic
Capacitors C
G
and C
D
built-in
Standby function (oscillator stops)
3µA(3V operation) and 6µA(5V operation) low
standby current
Inverter amplifier feedback resistance built-in
INH pin pull-up resistance built-in
INH = L : 2MΩ
typ
INH = H : 90kΩ
typ
•
•
•
•
•
•
•
CMOS input level
8mA(V
DD
= 3.0 V) and 16mA(V
DD
= 5.0 V)
output drive capability
CMOS output duty level
Output three-state function
2.7 to 5.5 V supply voltage
Oscillator frequency output
8-pin SOIC package (PT7C5002LxW) and die
form (PT7C5002LxDE) available
Description
The PT7C5002L series are crystal oscillator
module ICs that incorporate high-frequency, low
current consumption oscillator and output buffer
circuits. Feedback resistors and high-frequency
capacitors are built-in, eliminating the need for
external components to make a stable 3rd overtone
oscillation.
Ordering Information
Part No.
PT7C5002LxW
PT7C5002LxWE
PT7C5002LxDE
Package
Type
SOIC-8
Lead free
SOIC-8
DIE
Operating
Range
Industrial
Industrial
Industrial
Note:
Below is the detailed definition of part no.
Application
•
Used for crystal oscillator
PT7C
Device Type
Clock series
XO 5002L Series
5002L
A
W
Package
W: SOIC-8
DE: die form
Operating frequency range
Suffix
A
A
B
B
C
C
D
D
E
E
F
F
3V operation
Suffix
f (MHz)
f
~ 40
30
(MHz)
40
30~40
~ 50
50
40~50
~ 70
70
50~70
~ 90
85
70~90
~ 100
25 ~ 30
85~100
25~30
5V operation
f (MHz)
40~60
50~70
70~100
-
-
-
PT0203(11/06)
1
Ver:1
Data Sheet
PT7C5002L series
Crystal Oscillator Module ICs
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Series Configuration
Part No.
Recommended
operating
frequency range (MHz)
3V
5V
operating operating
30 to 40
40 to 60
40 to 50
50 to 70
70 to 90
85 to 100
25 to 30
50 to 70
70 to 100
-
-
-
g
m
Built-in capacitance
(relative
value)
C
D
C
G
(pF)
(pF)
1.0
8
15
1.5
1.5
2.0
2.0
1.0
8
8
8
8
10
15
10
10
10
15
R
f1
(kΩ)
5.6
4.7
3.9
3.9
2.7
8.5
C
f
(pF)
22
22
22
22
22
22
Output
duty
level
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
Output
current
(mA)
8
8
8
8
8
8
Standby
function
Yes
Yes
Yes
Yes
Yes
Yes
PT7C5002LA
PT7C5002LB
PT7C5002LC
PT7C5002LD
PT7C5002LE
PT7C5002LF
Block Diagram
VDD
GND
XT
C
G
R
f1
C
f
C
D
XT
Q
R
f2
C
f2
R
up
INH
Function Description
Standby Function
The oscillator stops when INH goes LOW. When the oscillator stops, the oscillator output on Q goes high impedance.
INH
HIGH (or open)
Low
f
O
output frequency
High impedance
Q
Oscillator
Normal operation
Stopped
PT0203(11/06)
2
Ver:1
Data Sheet
PT7C5002L series
Crystal Oscillator Module ICs
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Pin Configuration
PT7C5002LxW
1
2
3
4
INH
XT
XT
GND
VDD
NC
NC
Q
8
7
6
5
Pin Description
Pin
1
2
3
4
5
6
7
8
Sym
INH
XT
XT
GND
Q
NC
NC
VDD
Type
I
I
O
P
O
-
-
P
Description
Output state control. Oscillator stopped to make the chip enter standby mode when LOW.
Pull-up resistor built in.
Amplifier input.
Amplifier output.
Ground.
Output. Output frequency. High impedance at standby operation.
No connection.
No connection.
Supply voltage.
Crystal oscillator connected between XT and XT
PT0203(11/06)
3
Ver:1
Data Sheet
PT7C5002L series
Crystal Oscillator Module ICs
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Maximum Ratings
Storage Temperature (die form).....................................................- 65oC to +150oC
Storage Temperature (package form) ........................................- 40oC to +125oC
Supply Voltage to Ground Potential (V
DD
to GND ..................- 0.5V to7.0V
DC Input (All Other Inputs except V
DD
& GND) . -0.5V to V
DD
+0.5V
Output Current ............................................................................ 25mA
Power Dissipation (3V operation).........................................200mW (package form)
Power Dissipation (5V operation).........................................500mW (package form)
Note:
Stresses greater than those listed under
MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other condi-tions above those indicated in
the operational sec-tions of this specification is
not implied. Exposure to absolute maximum
rating conditions for extended periods may
affect reliability.
Recommended Operating Conditions
Sym
Parameter
Conditions
C
L
≤
15 pF, f
≤
70MHz
Die form C
L
≤
15 pF, 70 < f
≤
100MHz
C
L
≤
30 pF, f
≤
70MHz
C
L
≤
15 pF, f
≤
50MHz
Package
C
L
≤
15 pF, 50 < f
≤
70MHz
form
C
L
≤
30 pF, f
≤
50MHz
f
≤
70MHz, C
L
=50pF
PT7C5002LA/LB
f
≤
100MHz, C
L
=15pF
PT7C5002LC
f
≤
100MHz, C
L
=15pF
-
-
Min
2.7
3.0
3.0
2.7
3.0
3.0
4.5
4.5
4.5
GND
-20
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
3.6
3.6
3.6
3.6
3.6
3.6
5.5
5.5
5.5
V
DD
80
Unit
V
DD
Supply voltage
V
V
IN
T
OPR
Input voltage
Operating
temperature
V
°C
PT0203(11/06)
4
Ver:1
Data Sheet
PT7C5002L series
Crystal Oscillator Module ICs
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DC Electrical Characteristics
3V operation
(V
DD
= 2.7 to 3.6 V, T
A
= -20 to 80 °C, unless otherwise noted.)
Sym
Parameter
Conditions
PT7C5002LA, PT7C5002LF
C
L
= 30 pF, f = 30 MHz
INH = open,
PT7C5002LB
Measurement cct 3,
C
L
= 30 pF, f = 50 MHz
load cct 1,
PT7C5002LC
V
DD
= 3.0 to 3.6 V
C
L
= 30 pF, f = 70 MHz
PT7C5002LD, PT7C5002LE
C
L
= 15 pF, f = 100 MHz
INH = LOW, Measurement cct 3
Min
-
-
-
-
-
0.7V
DD
-
0.4
50
4.7
4.0
3.3
2.2
7.2
50
19.8
Typ
10
15
20
25
3
-
-
-
-
5.6
4.7
3.9
2.7
8.5
-
22
Max
18
25
35
45
10
-
0.3V
DD
4
150
6.5
5.4
4.5
3.2
9.8
150
24.2
kΩ
pF
kΩ
µA
V
MΩ
kΩ
mA
Unit
I
DD
Current consumption
I
ST
V
IH
V
IL
R
UP
Standby current
High level input voltage INH pin
Low level input voltage INH pin
INH pull-up resistance
Measurement cct 4, INH = LOW
Measurement cct 4, INH = 0.7V
DD
PT7C5002LA
Design value,
AC feedback resistance determined by the
internal wafer pattern
PT7C5002LB
PT7C5002LC, PT7C5002LD
PT7C5002LE
PT7C5002LF
R
f1
R
f2
C
f
DC feedback resistance Measurement cct 5
AC feedback
capacitance
Design value, determined by the internal wafer pattern
PT7C5002LA
PT7C5002LB
PT7C5002LC
PT7C5002LD
PT7C5002LE
Built-in capacitance
Design value, determined by the
internal wafer pattern
PT7C5002LF
PT7C5002LA
PT7C5002LB
PT7C5002LF
PT7C5002LC
PT7C5002LD
PT7C5002LE
High level output
voltage
Low level output
voltage
Output leakage current
Q: Measurement cct 1, V
DD
= 2.7 V, I
OH
= 8 mA
Q: Measurement cct 1, V
DD
= 2.7 V, I
OL
= 8 mA
Q: Measurement cct 2,
INH = LOW, V
DD
= 3.6V
V
OH
= V
DD
V
OL
= GND
C
G
7.2
8
8.8
pF
9
13.5
10
15
11
16.5
pF
C
D
9
2.2
-
-
-
10
2.4
0.3
-
-
11
-
V
0.4
10
µA
10
V
OH
V
OL
I
Z
PT0203(11/06)
5
Ver:1
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