Datasheet> 器件分类 > 分立半导体> 二极管> AR50BB0G

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AR50BB0G: 产品描述Rectifier Diode, 1 Phase, 1 Element, 50A, 100V V(RRM), Silicon,; 产品类别分立半导体二极管; 文件大小359KB，共4页; 制造商Taiwan Semiconductor; 官网地址http://www.taiwansemi.com/

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AR50BB0G概述

Rectifier Diode, 1 Phase, 1 Element, 50A, 100V V(RRM), Silicon,

AR50BB0G规格参数

参数名称	属性值
厂商名称	Taiwan Semiconductor
包装说明	O-PEDB-N2
Reach Compliance Code	compliant
ECCN代码	EAR99
应用	GENERAL PURPOSE
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.1 V
JESD-30 代码	O-PEDB-N2
最大非重复峰值正向电流	800 A
元件数量	1
相数	1
端子数量	2
最高工作温度	175 °C
最低工作温度	-50 °C
最大输出电流	50 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	DISK BUTTON
最大重复峰值反向电压	100 V
最大反向电流	5 µA
最大反向恢复时间	3 µs
表面贴装	YES
端子形式	NO LEAD
端子位置	END

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AR50A thru AR50M

Taiwan Semiconductor

CREAT BY ART

FEATURES

- Diffused junction

- Low leakage

- High surge capability

- Low cost construction utilizing void-free molded plastic technique

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

High Current Button Rectifiers

MECHANICAL DATA

Case:

Molding compound, UL flammability classification rating 94V-0

Packing code with suffix "G" means green compound (halogen-free)

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Weight:

1.8 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25

C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Maximum instantaneous forward voltage (Note 1)

@ 50 A

Maximum reverse current @ Rated VR T

=25

=125

Typical reverse recovery time (Note 2)

Typical junction capacitance (Note 3)

Typical Thermal Resistance

Operating junction temperature range

Storage temperature range

Note 1: Pulse test with PW=300μs, 1% duty cycle

Note 2: Reverse Recovery Time Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

SYMBOL

RRM

RMS

F(AV)

FSM

trr

θJC

STG

50A

50B

100

50D

200

140

200

50G

400

280

400

800

1.1

250

300

- 50 to +175

50J

600

420

600

50K

800

560

800

50M

1000

700

1000

UNIT

μA

μs

C/W

Document Number: DS_D1409023

Version: E14

AR50BB0G相似产品对比

	AR50BB0G	AR50JB0	AR50JB0G	AR50AB0G	AR50AB0	AR50BB0	AR50GB0G	AR50KB0G	AR50KB0	AR50DB0G
描述	Rectifier Diode, 1 Phase, 1 Element, 50A, 100V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 50A, 100V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 50A, 800V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 50A, 800V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon,
包装说明	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
应用	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 代码	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2	O-PEDB-N2
最大非重复峰值正向电流	800 A	800 A	800 A	800 A	800 A	800 A	800 A	800 A	800 A	800 A
元件数量	1	1	1	1	1	1	1	1	1	1
相数	1	1	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	2	2	2
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
最低工作温度	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
最大输出电流	50 A	50 A	50 A	50 A	50 A	50 A	50 A	50 A	50 A	50 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
最大重复峰值反向电压	100 V	600 V	600 V	50 V	50 V	100 V	400 V	800 V	800 V	200 V
最大反向电流	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
最大反向恢复时间	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs	3 µs
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	END	END	END	END	END	END	END	END	END	END
厂商名称	Taiwan Semiconductor	-	-	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor

AR50BB0G

AR50BB0G概述

AR50BB0G规格参数

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AR50BB0G相似产品对比

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