1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDLL variants
Qualified Levels*:
JAN, JANTX, JANTXV
and JANS
Available on
commercial
versions
1 Amp Schottky Barrier Rectifiers
Qualified per MIL-PRF-19500/586
DESCRIPTION
This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade
qualifications for the part numbers of 1N5819UR-1 and 1N6761UR-1 for high-reliability
applications. This small diode is hermetically sealed and bonded into a DO-213AB MELF
glass package.
Important:
For the latest information, visit our website
http://www.microsemi.com.
DO-213AB (MELF,
LL41) Package
FEATURES
•
•
•
•
JEDEC registered 1N5818, 1N5819 and 1N6761 numbers.
Hermetically sealed DO-41 glass package.
Metallurgically bonded.
*1N5819UR-1 and 1N6761UR-1 only are available in JAN, JANTX, JANTXV and JANS qualifications
per MIL-PRF-19500/586.
(See
part nomenclature
for all available options.)
•
RoHS compliant versions available (commercial grade only).
Also available in:
DO-41 package
(axial-leaded)
1N5818-1, 1N5819-1,
1N6759-1 – 1N6761-1 and
DSB variants
APPLICATIONS / BENEFITS
•
•
•
•
Small size for high density mounting using flexible thru-hole leads (see package illustration).
Low reverse (leakage) currents.
Non-sensitive to ESD per MIL-STD-750 test method 1020 (human body model).
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise specified
Parameters/Test Conditions
Storage Temperature
Junction Temperature
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
Average Rectified Output Current
@ T
A
= 55 ºC on PCB board
Surge Peak Forward Current
Solder Temperature @ 10 s
Symbol
T
STG
T
J
R
ӨJEC
R
ӨJA
I
O
I
FSM
Value
-65 to +150
-65 to +125
-65 to +150
40
220
1.0
25
260
Unit
ºC
ºC
ºC/W
ºC/W
A
A
o
C
1N5819UR-1
1N6761UR-1
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
NOTE:
1. T
EC
= 55 ºC for the 1N5819UR-1 and T
EC
= 37 ºC for the 1N6761UR-1.
T4-LDS-0301-1, Rev. 1 (6/25/13)
©2013 Microsemi Corporation
Page 1 of 6
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDLL variants
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
•
CASE: Hermetically sealed glass DO-213AB MELF (LL41) package.
TERMINALS: Tin/lead or RoHS compliant matte-tin finished copper clad steel available (commercial grade only). Solderable per
MIL-STD-750, method 2026.
MARKING: Cathode band.
POLARITY: Diode to be operated with the banded end positive with respect to the opposite end for Zener regulation.
MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PPM/°C. The
COE of the Mounting Surface System should be selected to provide a suitable match with this device.
TAPE & REEL optional: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities.
WEIGHT: Approximately 0.05 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
1N5818UR-1, 1N5819UR-1* and 1N6761UR-1*:
JAN
Reliability Level
JAN = JAN level*
JANTX = JANTX level*
JANTXV = JANTXV level*
JANS = JANS level*
*(applicable only to 1N5819UR-1
and 1N6761UR-1 numbers)
1N5819 UR -1 (e3)
RoHS Compliance
e3 = RoHS compliant (on
commercial grade only)
Blank = non-RoHS compliant
Metallurgically Bonded
MELF Surface Mount
Blank = Commercial grade
JEDEC type number
(see
Electrical Characteristics
table)
CDLL6759 – CDLL6761:
CDLL
Microsemi Designation
Series number
(see
Electrical Characteristics
table)
6759
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
CDLL1A20 – CDLL1A100:
CDLL
Microsemi Designation
1 Amp Rating
20 Volt Working Peak
Reverse Voltage (V
RWM
)
1A
20
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
T4-LDS-0301-1, Rev. 1 (6/25/13)
©2013 Microsemi Corporation
Page 2 of 6
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDLL variants
SYMBOLS & DEFINITIONS
Definition
Total Capacitance: The total small signal capacitance between the diode terminals of a complete device.
frequency
Surge Peak Forward Current: The forward current including all nonrepetitive transient currents but excluding all
repetitive transients (ref JESD282-B)
Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V
R
.
Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input
and a 180 degree conduction angle.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Forward Voltage: The positive anode-cathode voltage the device will exhibit at a specified I
F
current.
Reverse Voltage: The dc voltage applied in the reverse direction below the breakdown region.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
Symbol
C
T
f
I
FSM
I
R
I
O
V
(BR)
V
F
V
R
V
RWM
*ELECTRICAL CHARACTERISTICS
@ T
A
= 25 °C unless otherwise specified
WORKING
PEAK
REVERSE
(1)
VOLTAGE
V
RWM
Volts
30
45
60
80
100
20
30
40
50
60
80
100
MAXIMUM FORWARD
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT AT
RATED VOLTAGE
MAXIMUM
CAPACITANCE
@ V
R
= 5
VOLTS
f ≤ 1.0 MHz
C
T
pF
0.9
70
NA
NA
70
0.9
0.9
0.9
0.9
NA
NA
NA
TYPE NUMBER
1N5818UR-1*
†1N5819UR-1*
CDLL6759
CDLL6760
†1N6761UR-1*
CDLL1A20
CDLL1A30
CDLL1A40
CDLL1A50
CDLL1A60
CDLL1A80
CDLL1A100
V
F
@ 0.1A
Volts
0.36
0.34
0.38
0.38
0.38
0.36
0.36
0.36
0.36
0.38
0.38
0.38
V
F
@ 1.0 A
Volts
0.60
0.49
0.69
0.69
0.69
0.60
0.60
0.60
0.60
0.69
0.69
0.69
I
RM
@ 25°C
mA
0.10
0.05
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
I
RM
@ 100°C
mA
5.0
5.0
6.0
6.0
12.0
5.0
5.0
5.0
5.0
12.0
12.0
12.0
*Part number may also be ordered as CDLL5818 or CDLL5819 or CDLL6761.
† Also available with JAN, JANTX, JANTXV, and JANS military qualifications.
T4-LDS-0301-1, Rev. 1 (6/25/13)
©2013 Microsemi Corporation
Page 3 of 6
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDLL variants
GRAPHS
I
R
, Reverse Current (mA)
T
J
,
Junction Temperature (ºC)
FIGURE 1
Typical Reverse Leakage Current at Rated PIV (PULSED)
I
F
, Forward Current, Instantaneous (Amps)
V
F
, Forward Voltage, Instantaneous (Volts)
FIGURE 2
Typical Forward Voltage for 1N5819UR-1
T4-LDS-0301-1, Rev. 1 (6/25/13)
©2013 Microsemi Corporation
Page 4 of 6
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDLL variants
GRAPHS (continued)
Theta (
ºC/W
)
Time (s)
FIGURE 3
Thermal impedance for 1N5819UR-1 and 1N6761UR-1 (DO-213AB)
T4-LDS-0301-1, Rev. 1 (6/25/13)
©2013 Microsemi Corporation
Page 5 of 6
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