INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA1492
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
V
(BR)CEO
= -180V(Min)
·Good
Linearity of h
FE
·Complement
to Type 2SC3856
APPLICATIONS
·For
audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-180
V
V
CEO
Collector-Emitter Voltage
-180
V
V
EBO
Emitter-Base Voltage
-6
V
I
C
Collector Current-Continuous
-15
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
-4
A
P
C
130
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1492
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -50mA ; I
B
= 0
-180
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -5.0A; I
B
= -0.5A
B
-2.0
V
I
CBO
Collector Cutoff Current
V
CB
= -180V ; I
E
=0
-100
μA
I
EBO
Emitter Cutoff Current
V
EB
= -6V; I
C
=0
-100
μA
h
FE
DC Current Gain
I
C
= -3A ; V
CE
= -4V
50
180
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= -10V;f= 1.0MHz
500
pF
f
T
Current-Gain—Bandwidth Product
I
E
= 0.5A ; V
CE
= -12V
20
MHz
Switching times
t
on
Turn-on Time
I
C
= -10A ,R
L
= 4Ω,
I
B1
= -I
B2
= -1A,V
CC
=
-40V
0.6
μs
t
stg
Storage Time
0.9
μs
t
f
Fall Time
0.2
μs
h
FE
Classifications
O
50-100
P
70-140
Y
90-180
isc Website：www.iscsemi.cn
2
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA1492
isc Website：www.iscsemi.cn
3
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