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2SC3264Y: 产品描述Power Bipolar Transistor, 17A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN; 产品类别分立半导体晶体管; 文件大小23KB，共1页; 制造商SANKEN; 官网地址http://www.sanken-ele.co.jp/en/

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2SC3264Y概述

Power Bipolar Transistor, 17A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN

2SC3264Y规格参数

参数名称	属性值
包装说明	FLANGE MOUNT, R-PSFM-T3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
最大集电极电流 (IC)	17 A
集电极-发射极最大电压	230 V
配置	SINGLE
最小直流电流增益 (hFE)	70
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	60 MHz
Base Number Matches	1

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LAPT

2SC3264

Application :

Audio and General Purpose

(Ta=25°C)

Ratings

100

max

100

max

230

min

∗

2.0

max

typ

250

typ

MHz

20.0min

4.0max

Silicon NPN Epitaxial Planar Transistor

(Complement to type 2SA1295)

Absolute maximum ratings

(Ta=25°C)

Symbol

CBO

CEO

EBO

stg

Ratings

230

200(Tc=25°C)

150

–55 to +150

Unit

°C

Electrical Characteristics

Symbol

CBO

EBO

(BR)CEO

(sat)

Conditions

=230V

=5V

=25mA

=4V, I

=5A

=5A, I

=0.5A

=12V, I

=–2A

=10V, f=1MHz

External Dimensions

MT-200

36.4

±0.3

24.4

±0.2

2-ø3.2

±0.1

21.4

±0.3

2.1

6.0

±0.2

Unit

1.05

+0.2

-0.1

5.45

±0.1

5.45

±0.1

0.65

+0.2

-0.1

3.0

+0.3

-0.1

∗h

Rank O(50 to 100), Y(70 to 140)

Typical Switching Characteristics (Common Emitter)

(V)

(Ω)

(A)

BB1

(V)

BB2

(V)

–5

(A)

0.5

(A)

–0.5

(

0.30typ

stg

(

2.40typ

(

0.50typ

Weight : Approx 18.4g

a. Part No.

b. Lot No.

– V

Characteristics

(Typical)

C E

(sat) – I

Characteristics

(Typical)

C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a ge V

C E (s at)

(V )

– V

B E

Temperature Characteristics

(Typical)

( V

= 4 V )

.5A

1.0

C o l l e c t o r Cu r r e n t I

( A)

400m

C ol l e c t o r C ur r e nt I

( A)

600m

200m

=20mA

0 .5

1. 0

1 .5

2 .0

–30˚

C (C

50mA

= 1 0A

125

˚C (

Cas

25˚C

ase

Tem

100mA

Col l e ct or - Em it t er V ol ta ge V

C E

(V )

Bas e C u r r e nt I

( A)

B as e - Em i t t o r Vo l t a g e V

( V )

C E

= 4 V )

200

D C C u r r e n t G ai n h

F E

D C C u r r e nt Ga i n h

200

12 5˚ C

100

( V

C E

= 4 V)

Transient Thermal Resistance

j-a

( ˚ C / W )

– I

Characteristics

(Typical)

F E

– I

Temperature Characteristics

(Typical)

j - a

– t Characteristics

Typ

2 5˚ C

–3 0 ˚ C

0 .5

0.02

0. 1

0. 5

10 17

0.02

0.1

0 .5

10 17

0 .1

10 0

Time t(ms)

1000 2000

C ol l ec t or C urre nt I

(A )

Co l le c to r Cu r r en t I

( A)

– I

Characteristics

(Typical)

( V

C E

=1 2 V )

100

Safe Operating Area

(Single Pulse)

2 00

Pc – Ta Derating

C ut- off F re q u e n c y f

( M H

)

Ma x imu m P ow e r D i s s i p a t i o n P

( W )

1 60

ith

Typ

C oll ec to r Cu r r e n t I

( A )

fin

1 20

ite

0.5

Without Heatsink

Natural Cooling

–0.02

0.1

– 0. 1

–1

–10

10 0

30 0

Emi t t e r Curre nt I

(A )

Co ll e ct o r - Em i t te r Vo lt a ge V

C E

( V)

W i t ho u t H ea t s i nk

100

125

150

Am b i e n t T e m p er at u r e T a ( ˚ C )

2SC3264Y相似产品对比

	2SC3264Y	2SC3264O
描述	Power Bipolar Transistor, 17A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN	Power Bipolar Transistor, 17A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
针数	3	3
Reach Compliance Code	unknow	unknow
ECCN代码	EAR99	EAR99
最大集电极电流 (IC)	17 A	17 A
集电极-发射极最大电压	230 V	230 V
配置	SINGLE	SINGLE
最小直流电流增益 (hFE)	70	50
JESD-30 代码	R-PSFM-T3	R-PSFM-T3
元件数量	1	1
端子数量	3	3
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	NPN
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON
标称过渡频率 (fT)	60 MHz	60 MHz
Base Number Matches	1	1

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