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CMS10(TE12L)

产品描述DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, M-FLAT-2, Signal Diode
产品类别分立半导体    二极管   
文件大小159KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

CMS10(TE12L)概述

DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, M-FLAT-2, Signal Diode

CMS10(TE12L)规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Toshiba(东芝)
包装说明M-FLAT-2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.55 V
JESD-30 代码R-PDSO-F2
最大非重复峰值正向电流25 A
元件数量1
端子数量2
最高工作温度150 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压40 V
表面贴装YES
技术SCHOTTKY
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
CMS10
TOSHIBA Schottky Barrier Rectifier
Schottky Barrier Type
CMS10
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.55 V (max)
Average forward current: I
F (AV)
= 1.0 A
Repetitive peak reverse voltage: V
RRM
= 40 V
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
(Note 1)
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
40
1.0
(Ta
=
21°C)
25 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
JEDEC
JEITA
TOSHIBA
3-4E1A
Note 1: Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm, soldering land: 6 mm
×
6 mm)
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM
I
RRM
C
j
Test Condition
I
FM
=
0.1 A
I
FM
=
0.5 A
I
FM
=
1.0 A
V
RRM
=
5 V
V
RRM
=
40 V
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
Thermal resistance
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
Min
Typ.
0.34
0.41
0.47
1.0
8.0
50
Max
0.55
500
60
°C/W
135
16
°C/W
μA
pF
V
Unit
Thermal resistance
R
th (j-ℓ)
1
2006-11-13

CMS10(TE12L)相似产品对比

CMS10(TE12L) CMS10(TE12R)
描述 DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, M-FLAT-2, Signal Diode DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, M-FLAT-2, Signal Diode
是否无铅 含铅 含铅
是否Rohs认证 不符合 不符合
包装说明 M-FLAT-2 R-PDSO-F2
针数 2 2
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PDSO-F2 R-PDSO-F2
元件数量 1 1
端子数量 2 2
最大输出电流 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 40 V 40 V
表面贴装 YES YES
技术 SCHOTTKY SCHOTTKY
端子形式 FLAT FLAT
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED

 
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