CMLM7387
MULTI DISCRETE MODULE
™
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW NOISE PNP TRANSISTOR
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TM
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM7387
is a Multi Discrete Module™ consisting of a single
N-Channel Enhancement-mode MOSFET and a Low
Noise PNP transistor packaged in a space saving
PICOmini™ SOT-563 surface mount case. This
device is designed for small signal general purpose
applications where size and operational efficiency are
prime requirements.
MARKING CODE: 7C7
FEATURES:
• ESD protection up to 2kV
• Low rDS(on) MOSFET
• Low VCE(SAT) PNP Transistor
SYMBOL
PD
PD
PD
TJ, Tstg
Θ
JA
SYMBOL
VDS
VGS
ID
IDM
SYMBOL
VCBO
VCEO
VEBO
IC
UNITS
mW
mW
mW
°C
°C/W
UNITS
V
V
mA
mA
UNITS
V
V
V
mA
SOT-563 CASE
• Devices are
Halogen Free
by design
APPLICATIONS:
• DC / DC Converters
• Battery Powered Portable Equipment
MAXIMUM RATINGS (SOT-563 Package):
(TA=25°C)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS Q1:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
MAXIMUM RATINGS Q2:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
350
300
150
-65 to +150
357
50
12
160
560
50
45
5.0
100
ELECTRICAL CHARACTERISTICS Q1:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF, IGSSR
VGS=8.0V, VDS=0V
IGSSF, IGSSR
VGS=12V, VDS=0V
IDSS
VDS=50V, VGS=0V
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
gFS
Notes:
TYP
MAX
1.0
5.0
10
1.0
4.0
5.0
UNITS
μA
μA
μA
V
V
Ω
Ω
mS
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=4.0V, ID=100mA
VGS=2.5V, ID=80mA
VDS=10V, ID=100mA
50
0.7
180
(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm
2
R0 (1-December 2009)
CMLM7387
MULTI DISCRETE MODULE
™
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW NOISE PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS Q1 - C
ontinued:
SYMBOL
TEST CONDITIONS
Crss
VDS=10V, VGS=0, f=1.0MHz
Ciss
VDS=10V, VGS=0, f=1.0MHz
Coss
VDS=10V, VGS=0, f=1.0MHz
ELECTRICAL CHARACTERISTICS Q2:
(TA=25°C)
ICBO
VCB= 30V
BVCBO
IC= 10μA
BVCEO
IC= 10mA
BVEBO
IE= 1.0μA
VCE(SAT)
IC= 10mA, IB= 0.5mA
VCE(SAT)
IC= 100mA, IB= 5.0mA
VBE(SAT)
IC= 10mA, IB= 0.5mA
VBE(SAT)
IC= 100mA, IB= 5.0mA
VBE(on)
VCE= 5.0V, IC= 2.0mA
VBE(on)
VCE= 5.0V, IC= 10mA
hFE
VCE= 5.0V, IC= 2.0mA
fT
VCE= 5.0V, IC=10mA, f=100MHz
Cob
VCB= 10V, IE=0, f=1.0MHz
NF
VCE= 5.0V, IC=0.2mA, RS=2kΩ f=1.0kHz, BW=200Hz
MIN
TYP
2.1
25
5.0
MAX
UNITS
pF
pF
pF
15
50
45
5.0
100
400
700
900
600
220
100
750
820
475
4.5
10
nA
V
V
V
mV
mV
mV
mV
mV
mV
MHz
pF
dB
SOT-563 - MECHANICAL OUTLINE
LEAD CODE:
1) SOURCE Q1
2) GATE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) DRAIN Q1
MARKING CODE: 7C7
R0 (1-December 2009)
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