RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
| 参数名称 | 属性值 |
| 厂商名称 | Microwave_Technology_Inc. |
| 包装说明 | DISK BUTTON, O-PRDB-F4 |
| Reach Compliance Code | unknown |
| 外壳连接 | SOURCE |
| 配置 | SINGLE |
| FET 技术 | METAL SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 0.06 pF |
| 最高频带 | X BAND |
| JESD-30 代码 | O-PRDB-F4 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 工作模式 | DEPLETION MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | DISK BUTTON |
| 极性/信道类型 | N-CHANNEL |
| 最小功率增益 (Gp) | 9 dB |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | FLAT |
| 端子位置 | RADIAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE |
| MWT-A173HG | MWT-A171HG | MWT-A170SG | MWT-A170HG | |
|---|---|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET |
| 厂商名称 | Microwave_Technology_Inc. | Microwave_Technology_Inc. | Microwave_Technology_Inc. | Microwave_Technology_Inc. |
| 包装说明 | DISK BUTTON, O-PRDB-F4 | FLANGE MOUNT, S-CDFM-F2 | DISK BUTTON, O-CRDB-F4 | DISK BUTTON, O-CRDB-F4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 外壳连接 | SOURCE | SOURCE | SOURCE | SOURCE |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| FET 技术 | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 0.06 pF | 0.06 pF | 0.06 pF | 0.06 pF |
| 最高频带 | X BAND | X BAND | X BAND | X BAND |
| JESD-30 代码 | O-PRDB-F4 | S-CDFM-F2 | O-CRDB-F4 | O-CRDB-F4 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 2 | 4 | 4 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | ROUND | SQUARE | ROUND | ROUND |
| 封装形式 | DISK BUTTON | FLANGE MOUNT | DISK BUTTON | DISK BUTTON |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最小功率增益 (Gp) | 9 dB | 9 dB | 9 dB | 9 dB |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | RADIAL | DUAL | RADIAL | RADIAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
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