MWT-A171HG概述

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

MWT-A171HG规格参数

参数名称	属性值
厂商名称	Microwave_Technology_Inc.
包装说明	FLANGE MOUNT, S-CDFM-F2
Reach Compliance Code	unknown
Is Samacsys	N
外壳连接	SOURCE
配置	SINGLE
FET 技术	METAL SEMICONDUCTOR
最大反馈电容 (Crss)	0.06 pF
最高频带	X BAND
JESD-30 代码	S-CDFM-F2
元件数量	1
端子数量	2
工作模式	DEPLETION MODE
最高工作温度	175 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	SQUARE
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
最小功率增益 (Gp)	9 dB
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE
Base Number Matches	1

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MWT-A171HG相似产品对比

	MWT-A171HG	MWT-A170SG	MWT-A173HG	MWT-A170HG
描述	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
厂商名称	Microwave_Technology_Inc.	Microwave_Technology_Inc.	Microwave_Technology_Inc.	Microwave_Technology_Inc.
包装说明	FLANGE MOUNT, S-CDFM-F2	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-PRDB-F4	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	unknown	unknown	unknown	unknown
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE	SINGLE	SINGLE	SINGLE
FET 技术	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
最大反馈电容 (Crss)	0.06 pF	0.06 pF	0.06 pF	0.06 pF
最高频带	X BAND	X BAND	X BAND	X BAND
JESD-30 代码	S-CDFM-F2	O-CRDB-F4	O-PRDB-F4	O-CRDB-F4
元件数量	1	1	1	1
端子数量	2	4	4	4
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
最高工作温度	175 °C	175 °C	175 °C	175 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED
封装形状	SQUARE	ROUND	ROUND	ROUND
封装形式	FLANGE MOUNT	DISK BUTTON	DISK BUTTON	DISK BUTTON
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最小功率增益 (Gp)	9 dB	9 dB	9 dB	9 dB
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	RADIAL	RADIAL	RADIAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE

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