RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M218, 2 PIN
参数名称 | 属性值 |
厂商名称 | Microsemi |
包装说明 | FLANGE MOUNT, R-CDFM-F2 |
针数 | 2 |
Reach Compliance Code | compliant |
外壳连接 | BASE |
配置 | SINGLE |
最高频带 | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码 | R-CDFM-F2 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 2 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | NPN |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | TIN LEAD |
端子形式 | FLAT |
端子位置 | DUAL |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
MS2090 | MS2177 | AM0710-300 | |
---|---|---|---|
描述 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M218, 2 PIN | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, M119, 4 PIN | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, S036 |
厂商名称 | Microsemi | Microsemi | Microsemi |
包装说明 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F4 | S036 |
针数 | 2 | 4 | 2 |
Reach Compliance Code | compliant | compliant | unknown |
最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
JESD-609代码 | e0 | e0 | e0 |
极性/信道类型 | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD |
晶体管元件材料 | SILICON | SILICON | SILICON |
配置 | SINGLE | - | Single |
JESD-30 代码 | R-CDFM-F2 | R-CDFM-F4 | - |
端子数量 | 2 | 4 | - |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | - |
封装形状 | RECTANGULAR | RECTANGULAR | - |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | - |
端子形式 | FLAT | FLAT | - |
端子位置 | DUAL | DUAL | - |
晶体管应用 | AMPLIFIER | AMPLIFIER | - |
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