TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
RADIATION HARDENED
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
DEVICES
LEVELS
2N3439
2N3439L
2N3439UA
2N3440
2N3440L
2N3440UA
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
@ T
C
= +25°C
(2)
UA
@ T
SP
= +25°C
(3)
Operating & Storage Temperature Range
NOTES:
1) Derate linearly @ 4.57mW/°C for T
A
> +25°C
2) Derate linearly @ 28.5mW/°C for T
C
> +25°C
3) Derate linearly @ 14mW/°C for T
SP
> +25°C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
, T
stg
2N3439
350
450
2N3440
250
300
Unit
Vdc
Vdc
Vdc
Adc
W
°C
TO-5
2N3439L, 2N3440L
7.0
1.0
0.8
5.0
2.0
-65 to +200
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
2N3439 / L / UA
2N3440 / L / UA
R
BB1
= 470Ω;V
BB1
= 6V
L = 25mH (min); f = 30 – 60Hz
Collector-Emitter Cutoff Current
V
CE
= 300Vdc
2N3439 / L / UA
V
CE
= 200Vdc
2N3440 / L / UA
Emitter-Base Cutoff Current
V
EB
= 7.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 450Vdc, V
BE
= -1.5Vdc
2N3439 / L / UA
V
CE
= 300Vdc, V
BE
= -1.5Vdc
2N3440 / L / UA
Collector-Base Cutoff Current
V
CB
= 360Vdc
2N3439 / L / UA
V
CB
= 250Vdc
2N3440 / L / UA
V
CB
= 450Vdc
2N3439 / L / UA
V
CB
= 300Vdc
2N3440 / L / UA
T4-LDS-0134 Rev. 2 (110088)
V
(BR)CEO
350
250
Vdc
TO-39 (TO-205AD)
2N3439, 2N3440
µAdc
µAdc
µAdc
I
CEO
I
EBO
I
CEX
2.0
2.0
10
5.0
5.0
2.0
2.0
5.0
5.0
I
CBO
µAdc
UA
2N3439UA, 2N3440UA
Page 1 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
(CONT.)
Parameters / Test Conditions
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 20mAdc, V
CE
= 10Vdc
I
C
= 2.0mAdc, V
CE
= 10Vdc
I
C
= 0.2mAdc, V
CE
= 10Vdc
Collector-Emitter Saturation Voltage
I
C
= 50mAdc, I
B
= 4.0mAdc
Base-Emitter Saturation Voltage
I
C
= 50mAdc, I
B
= 4.0mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 10mAdc, V
CE
= 10Vdc, f = 5.0MHz
Forward Current Transfer Ratio
I
C
= 5.0mAdc, V
CE
= 10V, f = 1.0kHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
V
CB
= 5.0Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
CC
= 200Vdc; I
C
= 20mAdc, I
B1
= 2.0mAdc
Turn-Off Time
V
CC
= 200Vdc; I
C
= 20mAdc, I
B1
= -I
B2
= 2.0mAdc
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t = 1.0s
Test 1
V
CE
= 5.0Vdc, I
C
= 1.0Adc
Test 2
V
CE
= 350Vdc, I
C
= 14mAdc
Test 3
V
CE
= 250Vdc, I
C
= 20mAdc
Both Types
2N3439 / L / UA
2N3440 / L / UA
Symbol
t
on
t
off
Min.
Max.
1.0
10
Unit
µs
µs
Symbol
|h
fe
|
h
fe
C
obo
C
ibo
Min.
3.0
25
10
75
pF
pF
Max.
15
Unit
Symbol
Min.
Max.
Unit
h
FE
40
30
10
160
V
CE(sat)
V
BE(sat)
0.5
1.3
Vdc
Vdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%
T4-LDS-0134 Rev. 2 (110088)
Page 2 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Cutoff Current
V
CE
= 300Vdc
V
CE
= 200Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 450Vdc, V
BE
= -1.5Vdc
V
CE
= 300Vdc, V
BE
= -1.5Vdc
Collector-Base Cutoff Current
V
CB
= 360Vdc
V
CB
= 250Vdc
V
CB
= 450Vdc
V
CB
= 300Vdc
Forward-Current Transfer Ratio
I
C
= 20mAdc, V
CE
= 10Vdc
I
C
= 2.0mAdc, V
CE
= 10Vdc
I
C
= 0.2mAdc, V
CE
= 10Vdc
Collector-Emitter Saturation Voltage
I
C
= 50mAdc, I
B
= 4.0mAdc
Base-Emitter Saturation Voltage
I
C
= 50mAdc, I
B
= 4.0mAdc
V
CE(sat)
[h
FE
]
2N3439 / L / UA
2N3440 / L / UA
Symbol
2N3439 / L / UA
2N3440 / L / UA
I
CEO
Min.
Max.
4
4
20
10
10
Unit
µAdc
µAdc
I
EBO
I
CEX
µAdc
2N3439 / L / UA
2N3440 / L / UA
2N3439 / L / UA
2N3440 / L / UA
I
CBO
4
4
10
10
[20]
[15]
[5]
0.56
160
µAdc
Vdc
V
BE(sat)
1.5
Vdc
T4-LDS-0134 Rev. 2 (110088)
Page 3 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.10
6.60
.335
.370
8.51
9.40
.200 TP
5.08 TP
.016
.019
0.41
0.48
See note 14
.016
.019
0.41
0.48
.050
1.27
.250
.100
.030
.029
.045
.028
.034
.010
45° TP
6.35
2.54
0.74
0.71
45° TP
0.76
1.14
0.86
0.25
Note
6
7
8,9
8,9
8,9
8,9
7
5
3,4
3
10
7
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. For transistor types 2N3439L and 2N3440L (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45
mm) max. For transistor types 2N3439 and 2N3440 (T0-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch
(19.05 mm) max.
FIGURE 1.
Physical dimensions (similar to TO-5 and TO-39).
T4-LDS-0134 Rev. 2 (110088)
Page 4 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
NOTES:
Dimensions
1. Dimensions are in inches.
Symbol
Inches
Millimeters
Note
2. Millimeters are given for general information only.
Min
Max
Min
Max
3. Dimension "CH" controls the overall package thickness.
BL
.215
.225
5.46
5.71
When a window lid is used, dimension "CH" must increase
BL2
.225
5.71
by a minimum of .010 inch (0.254 mm) and a maximum of
BW
.145
.155
3.68
3.93
.040 inch (1.020 mm).
BW2
.155
3.93
4. The corner shape (square, notch, radius, etc.) may vary at the
CH
.061
.075
1.55
1.90
3
manufacturer's option, from that shown on the drawing.
L3
.003
.007
0.08
0.18
5
5. Dimensions "LW2" minimum and "L3" minimum and the
LH
.029
.042
0.74
1.07
appropriate castellation length define an unobstructed three-
LL1
.032
.048
0.81
1.22
dimensional space traversing all of the ceramic layers in
LL2
.072
.088
1.83
2.23
which a castellation was designed. (Castellations are
LS
.045
.055
1.14
1.39
LW
.022
.028
0.56
0.71
required on bottom two layers, optional on top ceramic
LW2
.006
.022
0.15
0.56
5
layer.) Dimension "LW2" maximum and "L3" maximum
define the maximum width and depth of the castellation at
Pin no.
1
2
3
4
any point on its surface. Measurement of these dimensions
Transistor Collector Emitter Base N/C
may be made prior to solder dipping.
6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch
(0.15mm) for solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2.
Physical dimensions, surface mount (2N3439UA, 2N3440UA) version.
T4-LDS-0134 Rev. 2 (110088)
Page 5 of 5
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
