DISCRETE SEMICONDUCTORS
DATA SHEET
BFT25
NPN 2 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
November 1992
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
DESCRIPTION
NPN transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current
consumption (100
µA
to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.
PINNING
PIN
1
2
3
base
emitter
collector
1
Top view
BFT25
DESCRIPTION
Code: V1p
fpage
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
c
P
tot
f
T
C
re
G
UM
F
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
up to T
s
= 167
°C;
note 1
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
°C
I
C
= 1 mA; V
CE
= 1 V; f = 1 MHz;
T
amb
= 25
°C
open base
CONDITIONS
open emitter
−
−
−
−
2.3
−
18
3.8
TYP.
MAX.
8
5
6.5
30
−
0.45
−
−
UNIT
V
V
mA
mW
GHz
pF
dB
dB
maximum unilateral power gain I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
°C
noise figure
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
°C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
November 1992
2
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
f
>
1 MHz
up to T
s
= 167
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
MIN.
8
5
2
6.5
10
30
150
175
MAX.
V
V
V
mA
mA
mW
°C
°C
UNIT
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
= is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 10
µA;
V
CE
= 1 V
I
C
= 1 mA; V
CE
= 1 V
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz
I
E
= i
e
= 0; V
CB
= 0.5 V; f = 1 MHz
I
c
= i
c
= 0; V
EB
= 0; f = 1 MHz
I
C
= 1 mA; V
CE
= 1 V; f = 1 MHz;
T
amb
= 25
°C
−
20
20
1.2
−
−
−
−
−
−
−
MIN.
−
30
40
2.3
−
−
−
18
12
5.5
3.8
TYP.
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 167°C; note 1
BFT25
THERMAL RESISTANCE
260 K/W
MAX.
50
−
−
−
0.6
0.5
0.45
−
−
−
−
UNIT
nA
GHz
pF
pF
pF
dB
dB
dB
dB
maximum unilateral power gain I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
(note 1)
T
amb
= 25
°C
I
C
= 1 mA; V
CE
= 1 V; f = 800 MHz;
T
amb
= 25
°C
F
noise figure
I
C
= 0.1 mA; V
CE
= 1 V;
f = 500 MHz; T
amb
= 25
°C
I
C
= 1 mA; V
CE
= 1 V; f = 500 MHz;
T
amb
= 25
°C
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-------------------------------------------------------------
dB.
-
=
10 log
2
2
1
–
S
11
1
–
S
22
2
November 1992
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
MEA908
MEA914
60
handbook, halfpage
h FE
1
Cc
(pF)
0.8
40
0.6
0.4
20
0.2
0
10
–3
10
–2
10
–1
0
1
I C (mA)
10
0
2
4
6
8
10
V CB (V)
V
CE
= 1 V; T
j
= 25
°C.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.2
DC current gain as a function of collector
current.
Fig.3
Collector capacitance as a function of
collector-base voltage.
handbook, halfpage
3
MEA907
MEA909
8
handbook, halfpage
F
(dB)
6
fT
(GHz)
2
4
1
2
0
0
0.5
1
1.5
I C (mA)
2
0
10
–2
10
–1
1
I C (mA)
10
V
CE
= 1 V; f = 500 MHz; T
j
= 25
°C.
V
CE
= 1 V; Z
S
= opt.; f = 500 MHz; T
amb
= 25
°C.
Fig.4
Transition frequency as a function of
collector current.
Fig.5
Minimum noise figure as a function of
collector current.
November 1992
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
handbook, full pagewidth
1
0.5
2
0.2
5
10
+j
0
–j
500
0.2
800 MHz
5
0.2
0.5
1
2
5
10
∞
10
200
0.5
1
I
C
= 1 mA; V
CE
= 1 V; T
amb
= 25
°C.
Z
o
= 50
Ω.
2
MEA916
Fig.6 Common emitter input reflection coefficient (S
11
).
handbook, full pagewidth
90°
120°
60°
150°
200
500
800 MHz
30°
+ϕ
180°
1
2
3
0°
−ϕ
150°
30°
120°
90°
I
C
= 1 mA; V
CE
= 1 V; T
amb
= 25
°C.
60°
MEA918
Fig.7 Common emitter forward transmission coefficient (S
21
).
November 1992
5
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