Datasheet> 器件分类 > 分立半导体> 二极管> JANTXV1N4153

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JANTXV1N4153: 产品描述Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35,; 产品类别分立半导体二极管; 文件大小31KB，共2页; 制造商Compensated Devices Inc

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JANTXV1N4153概述

Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35,

JANTXV1N4153规格参数

参数名称	属性值
厂商名称	Compensated Devices Inc
Reach Compliance Code	unknown
其他特性	METALLURGICALLY BONDED
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-35
JESD-30 代码	O-LALF-W2
元件数量	1
端子数量	2
最大输出电流	0.15 A
封装主体材料	GLASS
封装形状	ROUND
封装形式	LONG FORM
认证状态	Not Qualified
参考标准	MIL-19500/337
最大反向恢复时间	0.004 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL

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• 1N4153 and 1N4153-1 AVAILABLE IN

JAN, JANTX,

AND

JANTXV

PER MIL-PRF-19500/337

• SWITCHING DIODES

• HERMETICALLY SEALED

• METALLURGICALLY BONDED

• DOUBLE PLUG CONSTRUCTION

1N4153

and

1N4153-1

MAXIMUM RATINGS

Junction Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Operating Current: 150 mA @ TA = +25°C

Derating: 1.0 mA dc/°C Above TA = +25°C

Forward Surge Current: 2A (pk), (tp = 1µs); 0.25A (pk), (tp = 1s)

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise speciﬁed.

Type

V BR

V RWM

I R1

VR = 50 V dc

IR = 5 µA

V dc

V (pk)

TA = 25°C

nA dc

1 R2

VR = 50 V dc

TA = 150°C

µA dc

VR = 0; f = 1 Mhz;

trr

IF = IR = 10 mA dc

RL = 100 ohms

FIGURE 1

1N4153-1

2.0

FORWARD VOLTAGE LIMITS – ALL TYPES

V F1

Limits

I F = 100 µA dc

V F2

I F = 250 µA dc

V F3

I F = 1 mA dc

V F4

I F = 2 mA dc

V F5

I F = 10 mA dc

V F6

I F = 20 mA dc

DESIGN DATA

CASE:

Hermetically sealed

glass case per MIL-S-19500/337

D0-35 outline

LEAD MATERIAL:

Copper clad steel.

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE:

(ROJL):

250 ˚C/W maximum at L = .375

THERMAL IMPEDANCE: (Z

OJX): 70

˚C/W maximum

POLARITY:

Cathode end is banded.

MOUNTING POSITION:

Any.

V dc

minimum

maximum

0.49

0.55

V dc

0.53

0.59

V dc

0.59

0.67

V dc

0.62

0.70

V dc

0.70

0.81

V dc

0.74

0.88

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

JANTXV1N4153相似产品对比

	JANTXV1N4153	JANTX1N4153-1	JANTXV1N4153-1	JAN1N4153-1	JANTX1N4153	JAN1N4153
描述	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35,	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35, GLASS PACKAGE-2	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35, GLASS PACKAGE-2	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35, GLASS PACKAGE-2	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35,	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 代码	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
最大输出电流	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
封装主体材料	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
参考标准	MIL-19500/337	MIL-19500/337H	MIL-19500/337H	MIL-19500/337H	MIL-19500/337	MIL-19500/337
最大反向恢复时间	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	-	1	1	1	1	1

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