2SD613PF,2SD613PF pdf中文资料,2SD613PF引脚图,2SD613PF电路-Datasheet-电子工程世界

2SD613PF: 产品描述Power Bipolar Transistor, 6A I(C), 85V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN; 产品类别分立半导体晶体管; 文件大小28KB，共4页; 制造商SANYO; 官网地址http://www.semic.sanyo.co.jp/english/index-e.html

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2SD613PF概述

Power Bipolar Transistor, 6A I(C), 85V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

2SD613PF规格参数

参数名称	属性值
零件包装代码	SFM
包装说明	FLANGE MOUNT, R-PSFM-T3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
最大集电极电流 (IC)	6 A
集电极-发射极最大电压	85 V
配置	SINGLE
最小直流电流增益 (hFE)	160
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	NPN
最大功率耗散 (Abs)	60 W
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管元件材料	SILICON
标称过渡频率 (fT)	15 MHz
Base Number Matches	1

2SD613PF相似产品对比

	2SD613PF	2SB633PD	2SB633PE	2SB633PF	2SD613PD	2SD613PE
描述	Power Bipolar Transistor, 6A I(C), 85V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 6A I(C), 85V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 6A I(C), 85V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 6A I(C), 85V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 6A I(C), 85V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN	Power Bipolar Transistor, 6A I(C), 85V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
零件包装代码	SFM	SFM	SFM	SFM	SFM	SFM
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
针数	3	3	3	3	3	3
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	6 A	6 A	6 A	6 A	6 A	6 A
集电极-发射极最大电压	85 V	85 V	85 V	85 V	85 V	85 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	160	60	100	160	60	100
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	NPN	PNP	PNP	PNP	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	15 MHz	15 MHz	15 MHz	15 MHz	15 MHz	15 MHz
Objectid	-	1915422119	1915422120	1915422121	1915422143	-

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