DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV27 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Oct 02
1997 Nov 24
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
BYV27 series
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
PARAMETER
repetitive peak reverse voltage
BYV27-50
BYV27-100
BYV27-150
BYV27-200
BYV27-300
BYV27-400
BYV27-500
BYV27-600
V
R
continuous reverse voltage
BYV27-50
BYV27-100
BYV27-150
BYV27-200
BYV27-300
BYV27-400
BYV27-500
BYV27-600
I
F(AV)
average forward current
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
I
F(AV)
average forward current
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
50
100
150
200
300
400
500
600
50
100
150
200
300
400
500
600
2.0
1.9
1.6
1.30
1.25
1.10
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A
A
UNIT
T
tp
= 85
°C;
lead length = 10 mm;
see Figs 2, 3 and 4;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
T
amb
= 60
°C;
printed-circuit board
mounting (see Fig. 25);
see Figs 5, 6 and 7;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
−
−
−
−
−
−
1997 Nov 24
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYV27-50 to 400
BYV27-500 and 600
I
FRM
repetitive peak forward current
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
I
FSM
non-repetitive peak forward current
BYV27-50 to 400
BYV27-500 and 600
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
see Fig. 17
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
T
amb
= 60
°C;
see Figs 11, 12 and 13
CONDITIONS
T
tp
= 85
°C;
see Figs 8, 9 and 10
−
−
−
−
−
−
−
−
−65
−65
BYV27 series
MIN.
MAX.
20
16
14
13
11
50
40
20
+175
+175
A
A
A
A
A
A
A
UNIT
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
V
F
forward voltage
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
V
(BR)R
reverse avalanche breakdown
voltage
BYV27-50
BYV27-100
BYV27-150
BYV27-200
BYV27-300
BYV27-400
BYV27-500
BYV27-600
I
R
reverse current
V
R
= V
RRMmax
;
see Fig. 21
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig. 21
I
R
= 0.1 mA
55
110
165
220
330
440
560
675
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
150
V
V
V
V
V
V
V
V
µA
µA
I
F
= 2 A;
see Figs 18, 19 and 20
CONDITIONS
I
F
= 2 A; T
j
= T
j max
;
see Figs 18, 19 and 20
MIN.
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
MAX.
0.78
0.82
1.00
0.98
1.05
1.25
V
V
V
V
V
V
UNIT
1997 Nov 24
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
t
rr
PARAMETER
reverse recovery time
BYV27-50 to 200
BYV27-300 to 600
C
d
diode capacitance
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
dI
R
--------
dt
maximum slope of reverse recovery
current
when switched from
I
F
= 1 A to V
R
≥
30 V
and dI
F
/dt =
−1
A/µs;
see Fig. 26
CONDITIONS
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig. 27
f = 1 MHz; V
R
= 0;
see Figs 22, 23 and 24
MIN.
−
−
−
−
−
−
BYV27 series
TYP.
−
−
MAX.
25
50
UNIT
ns
ns
100
80
65
−
−
−
−
4
pF
pF
pF
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig. 25.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
1997 Nov 24
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
GRAPHICAL DATA
MGA849
BYV27 series
2.0
handbook, halfpage
I F(AV)
(A)
1.6
20
15
2.0
handbook, halfpage
I F(AV)
(A)
1.6
MLC293
10 lead length (mm)
lead length 10 mm
1.2
1.2
0.8
0.8
0.4
0.4
0
0
0
100
Ttp ( C)
o
200
0
100
Ttp (
o
C)
200
BYV27-50 to 200
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
BYV27-300 and 400
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
3
MGK648
IF(AV)
(A)
lead length 10 mm
2
handbook, halfpage
2.0
MGA848
I F(AV)
(A)
1.6
1.2
0.8
1
0.4
0
0
BYV27-500 and 600
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
Ttp (°C)
200
0
0
100
T amb (
o
C)
200
BYV27-50 to 200
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig. 25.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1997 Nov 24
5
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