14A, 200V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| 参数名称 | 属性值 |
| 厂商名称 | NXP(恩智浦) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOGIC LEVEL COMPATIBLE |
| 雪崩能效等级（Eas） | 100 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V |
| 最大漏极电流 (ID) | 14 A |
| 最大漏源导通电阻 | 0.23 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 56 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| BUK555-200A,127 | BUK555-200B | BUK555-200A | BUK555-200B127 | BUK555-200A127 | |
|---|---|---|---|---|---|
| 描述 | 14A, 200V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | TRANSISTOR 13 A, 200 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | 14A, 200V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN | TRANSISTOR 13 A, 200 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | PLASTIC, TO-220AB, 3 PIN | PLASTIC, TO-220AB, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | - | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| 雪崩能效等级（Eas） | 100 mJ | 100 mJ | - | 100 mJ | 100 mJ |
| 外壳连接 | DRAIN | DRAIN | - | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V | - | 200 V | 200 V |
| 最大漏极电流 (ID) | 14 A | 13 A | - | 13 A | 14 A |
| 最大漏源导通电阻 | 0.23 Ω | 0.28 Ω | - | 0.28 Ω | 0.23 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-220AB | - | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | - | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | - | 1 | 1 |
| 端子数量 | 3 | 3 | - | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | 175 °C | - | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 56 A | 52 A | - | 52 A | 56 A |
| 认证状态 | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | - | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | - | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | - | SILICON | SILICON |
stm32/stm8
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嵌入式系统
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