Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, CDIP14, HERMETIC SEALED, DIP-14
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | AMD(超微) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP14,.3 |
| 针数 | 14 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 放大器类型 | OPERATIONAL AMPLIFIER |
| 架构 | VOLTAGE-FEEDBACK |
| 最大平均偏置电流 (IIB) | 0.003 µA |
| 25C 时的最大偏置电流 (IIB) | 0.002 µA |
| 标称共模抑制比 | 85 dB |
| 频率补偿 | YES |
| 最大输入失调电压 | 3000 µV |
| JESD-30 代码 | R-CDIP-T14 |
| JESD-609代码 | e0 |
| 长度 | 19.431 mm |
| 低-失调 | NO |
| 标称负供电电压 (Vsup) | -15 V |
| 功能数量 | 1 |
| 端子数量 | 14 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP14,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | +-5/+-20 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 Class C |
| 座面最大高度 | 5.08 mm |
| 最大压摆率 | 0.6 mA |
| 供电电压上限 | 20 V |
| 标称供电电压 (Vsup) | 15 V |
| 表面贴装 | NO |
| 技术 | BIPOLAR |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 最小电压增益 | 25000 |
| 宽度 | 7.62 mm |
| LM112D | LM212D | LD112 | LM112F | LM312D | LD312 | |
|---|---|---|---|---|---|---|
| 描述 | Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, CDIP14, HERMETIC SEALED, DIP-14 | Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, CDIP14, HERMETIC SEALED, DIP-14 | Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, 0.062 X 0.072 INCH, DIE-8 | Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, CDFP10, HERMETIC SEALED, CERPACK-10 | Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, CDIP14, HERMETIC SEALED, DIP-14 | Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, 0.062 X 0.072 INCH, DIE-8 |
| 零件包装代码 | DIP | DIP | DIE | DFP | DIP | DIE |
| 包装说明 | DIP, DIP14,.3 | HERMETIC SEALED, DIP-14 | DIE, DIE OR CHIP | DFP, FL10,.3 | DIP, DIP14,.3 | DIE, DIE OR CHIP |
| 针数 | 14 | 14 | 8 | 10 | 14 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 放大器类型 | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER |
| 架构 | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK |
| 最大平均偏置电流 (IIB) | 0.003 µA | 0.003 µA | 0.003 µA | 0.003 µA | 0.01 µA | 0.01 µA |
| 标称共模抑制比 | 85 dB | 85 dB | 85 dB | 85 dB | 80 dB | 80 dB |
| 频率补偿 | YES | YES | YES | YES | YES | YES |
| 最大输入失调电压 | 3000 µV | 3000 µV | 3000 µV | 3000 µV | 10000 µV | 10000 µV |
| JESD-30 代码 | R-CDIP-T14 | R-CDIP-T14 | R-XUUC-N8 | R-CDFP-F10 | R-CDIP-T14 | R-XUUC-N8 |
| 低-失调 | NO | NO | NO | NO | NO | NO |
| 标称负供电电压 (Vsup) | -15 V | -15 V | -15 V | -15 V | -15 V | -15 V |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 14 | 14 | 8 | 10 | 14 | 8 |
| 最高工作温度 | 125 °C | 85 °C | 125 °C | 125 °C | 70 °C | 70 °C |
| 最低工作温度 | -55 °C | -25 °C | -55 °C | -55 °C | - | - |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
| 封装代码 | DIP | DIP | DIE | DFP | DIP | DIE |
| 封装等效代码 | DIP14,.3 | DIP14,.3 | DIE OR CHIP | FL10,.3 | DIP14,.3 | DIE OR CHIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | UNCASED CHIP | FLATPACK | IN-LINE | UNCASED CHIP |
| 电源 | +-5/+-20 V | +-5/+-20 V | +-5/+-20 V | +-5/+-20 V | +-5/+-15 V | +-5/+-15 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大压摆率 | 0.6 mA | 0.6 mA | 0.6 mA | 0.6 mA | 0.8 mA | 0.8 mA |
| 标称供电电压 (Vsup) | 15 V | 15 V | 15 V | 15 V | 15 V | 15 V |
| 表面贴装 | NO | NO | YES | YES | NO | YES |
| 技术 | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR |
| 温度等级 | MILITARY | OTHER | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | FLAT | THROUGH-HOLE | NO LEAD |
| 端子位置 | DUAL | DUAL | UPPER | DUAL | DUAL | UPPER |
| 是否Rohs认证 | 不符合 | 不符合 | - | 不符合 | 不符合 | - |
| 厂商名称 | AMD(超微) | - | AMD(超微) | AMD(超微) | AMD(超微) | AMD(超微) |
| 25C 时的最大偏置电流 (IIB) | 0.002 µA | 0.002 µA | - | 0.002 µA | 0.007 µA | - |
| JESD-609代码 | e0 | e0 | - | e0 | e0 | - |
| 长度 | 19.431 mm | 19.431 mm | - | 6.1595 mm | 19.431 mm | - |
| 座面最大高度 | 5.08 mm | 5.08 mm | - | 2.032 mm | 5.08 mm | - |
| 供电电压上限 | 20 V | 20 V | - | 20 V | 20 V | - |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
| 端子节距 | 2.54 mm | 2.54 mm | - | 1.27 mm | 2.54 mm | - |
| 最小电压增益 | 25000 | 25000 | - | 25000 | 15000 | - |
| 宽度 | 7.62 mm | 7.62 mm | - | 6.35 mm | 7.62 mm | - |
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