DATA SHEET
GaAs FET
NES1823M-180
180 W L, S-BAND PUSH-PULL POWER GaAs FET
DESCRIPTION
The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT-
2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power (CW) with high
linear gain, high efficiency and low distortion. Its primary band is 1.8 to 2.3 GHz. The device employs 0.7
µ
m
Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal
characteristics, and reliability.
FEATURES
• Push-pull type GaAs FET
• V
DS
= 12.0 V operation
• High output power: P
out
= 180 W TYP.
• High linear gain: G
L
= 12.5 dB TYP.
• High power added efficiency:
η
add
= 48% TYP. @ V
DS
= 12.0 V, I
Dset
= 2.0 A (total), f = 2.17 GHz
• Hollow plastic package
ORDERING INFORMATION
Part Number
NES1823M-180
Order Number
NES1823M-180-A
Package
T-92M (Pb-Free)
ESD protective tray
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10357EJ02V0DS (2nd edition)
Date Published October 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2003, 2004
NES1823M-180
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Gain Compression (CW)
Symbol
V
DS
V
GSO
V
GDO
I
G
P
tot
T
ch
T
stg
G
comp
Ratings
19
−7
−26
900
250
175
−65
to +150
3.0
Unit
V
V
V
mA
W
°C
°C
dB
RECOMMENDED OPERATING LIMITS
Parameter
Drain to Source Voltage
Channel Temperature
Set Drain Current
Gate Resistance
Symbol
V
DS
T
ch
I
Dset
R
g
Note
Test Conditions
MIN.
−
−
TYP.
12.0
−
3.0
0.6
MAX.
12.0
+150
6.0
1.2
Unit
V
°C
A
Ω
V
DS
= 12.0 V, RF OFF
−
−
Note
R
g
is the series resistance between the gate supply and the FET gate.
V
GS
D
1
G
1
S
G
2
R
g2
V
GS
D
2
R
g
=
R
g1
×
R
g2
R
g1
+
R
g2
R
g1
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
Pinch-off Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Symbol
V
p
R
th
P
out
I
D
Test Conditions
V
DS
= 2.5 V, I
D
= 650 mA
Channel to Case
f = 2.17 GHz CW, V
DS
= 12 V,
P
in
= 43.0 dBm, R
g
= 0.6
Ω,
I
Dset
= 2.0 A Total (RF OFF)
(G
L
: P
in
= 31 dBm)
Note
MIN.
−0.8
−
51.5
−
−
11.5
TYP.
−0.5
0.30
52.5
32
48
12.5
MAX.
−0.2
0.40
−
−
−
−
Unit
V
°C/W
dBm
A
%
dB
η
add
G
L
Note
I
Dset
= 1.0 A each drain
2
Data Sheet PG10357EJ02V0DS
NES1823M-180
TYPICAL CHARACTERISTICS (T
A
= +25°C)
OUTPUT POWER,
η
add
vs. INPUT POWER
55
V
DS
= 12 V, I
Dset
= 2.0 A
R
g
= 0.6
Ω,
CW-signal,
50 f = 2.14 GHz
45
40
P
out
35
30
25
20
15
0
20
25
30
35
40
45
Input Power P
in
(dBm)
40
60
100
14
GAIN vs. FREQUNCY RESPONSE
V
DS
= 12 V, I
Dset
= 2.0 A
R
g
= 0.6
Ω,
CW, P
in
= 31 dBm
Power Added Efficiency
η
add
(%)
Output Power P
out
(dBm)
80
13
Gain G
L
(dB)
12
11
10
9
8
1.9
η
add
20
2.0
2.1
2.2
2.3
2.4
Frequency f (GHz)
3rd/5th Order Inter Modulation Distortion IM
3
/IM
5
(dBc)
IM
3
/IM
5
vs. AVERAGE OUTPUT POWER
(SET I
DS
DEPENDENCE)
−20
−25
−30
−35
−40
−45
−50
−55
−60
25
30
IM
5
, I
Dset
= 2 A
IM
5
, I
Dset
= 3 A
10 MHz
IM
3
, I
Dset
= 2 A
IM
3
, I
Dset
= 3 A
V
DS
= 12 V, I
Dset
= 2 A
R
g
= 0.6
Ω,
W-CDMA,
3 GPP test model 1, 64 DPCH,
2 carriers, Clipping 100%
f
1
= 2.135 GHz
f
2
= 2.145 GHz
(
∆
f = 10 MHz)
10 MHz
10 MHz
10 MHz
10 MHz
35
40
45
50
Average Output Power P
out
(dBm)
IM
3
@Bandwidth = 3.84 MHz
IM
5
@Bandwidth = 3.84 MHz
η
add
vs. AVERAGE OUTPUT POWER
(SET I
DS
DEPENDENCE)
40
Power Added Efficiency
η
add
(%)
35
30
25
20
15
10
5
0
25
30
35
40
45
50
I
Dset
= 3 A
I
Dset
= 2 A
V
DS
= 12 V, I
Dset
= 2 A
R
g
= 0.6
Ω,
W-CDMA,
3 GPP test model 1, 64 DPCH,
2 carriers, Clipping 100%
f
1
= 2.135 GHz
f
2
= 2.145 GHz
(
∆
f = 10 MHz)
Average Output Power P
out
(dBm)
Remark
The graphs indicate nominal characteristics.
Data Sheet PG10357EJ02V0DS
3
NES1823M-180
Adjacent Channel Leakage Power Ratio ACPR (dBc)
ACPR vs. AVERAGE OUTPUT POWER
(SET I
DS
DEPENDENCE)
−25
−30
−35
−40
−45
−50
−55
−60
−65
25
10 MHz, I
Dset
= 3 A
30
35
40
45
50
10 MHz, I
Dset
= 2 A
5 MHz, I
Dset
= 3 A
5 MHz, I
Dset
= 2 A
V
DS
= 12 V,
R
g
= 0.6
Ω,
W-CDMA,
3 GPP test model 1, 64 DPCH,
1 carriers, Clipping 100%
f = 2.14 GHz
10 MHz
5 MHz
10 MHz
5 MHz
Average Output Power P
out
(dBm)
∆
f = 5 MHz, 10 MHz
@Bandwidth = 3.84 MHz
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PG10357EJ02V0DS
NES1823M-180
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
Data Sheet PG10357EJ02V0DS
5
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