INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1485
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(sat)
= 2.0V(Max)@I
C
= 3A
·Wide
Area of Safe Operation
·Complement
to Type 2SB1054
APPLICATIONS
·Designed
for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
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VALUE
UNIT
100
V
100
V
5
V
5
A
8
A
3
W
60
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
a
=25℃
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SD1485
TYP.
MAX
UNIT
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.3A
B
2.0
V
V
BE
(on)
I
CBO
Base-Emitter On Voltage
I
C
= 3A; V
CE
= 5V
1.8
V
μA
Collector Cutoff Current
V
CB
= 100V; I
E
= 0
50
I
EBO
Emitter Cutoff Current
V
EB
= 3V; I
C
= 0
50
μA
h
FE-1
DC Current Gain
I
C
= 20mA; V
CE
= 5V
20
h
FE-2
DC Current Gain
h
FE-3
DC Current Gain
C
OB
Output Capacitance
f
T
Current-Gain—Bandwidth Product
h
FE-2
Classifications
R
40-80
Q
60-120
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w
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I
C
= 1A; V
CE
= 5V
40
I
C
= 3A; V
CE
= 5V
20
I
E
= 0; V
CB
= 10V; f= 1.0MHz
I
C
= 0.5A; V
CE
= 5V
200
170
pF
20
MHz
100-200
isc Website：www.iscsemi.cn
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