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2SB828S

产品描述12A, 50V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN
产品类别分立半导体    晶体管   
文件大小103KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 选型对比 全文预览

2SB828S概述

12A, 50V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN

2SB828S规格参数

参数名称属性值
Objectid1417098426
零件包装代码TO-218
包装说明FLANGE MOUNT, R-PSFM-T3
针数2
Reach Compliance Codeunknown
最大集电极电流 (IC)12 A
集电极-发射极最大电压50 V
配置SINGLE
最小直流电流增益 (hFE)140
JEDEC-95代码TO-218
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型PNP
功耗环境最大值80 W
最大功率耗散 (Abs)80 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)10 MHz
VCEsat-Max0.5 V

文档预览

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Ordering number:722G
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB828/2SD1064
50V/12A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Package Dimensions
unit:mm
2022A
[2SB828/2SD1064]
Features
· Low-saturation collector-to-emitter voltage :
V
CE(sat)
=–0.5V(PNP), 0.4V(NPN) max.
· Wide ASO leading to high resistance to breakdown.
( ) : 2SB828
1 ; Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)60
(–)50
(–)6
(–)12
(–)17
Unit
V
V
V
A
A
W
Tc=25˚C
80
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
IC=(–)6A, IB=(–)0.3A
70*
30
10
0.4
(–0.5)
MHz
V
V
Conditions
Ratings
min
ty p
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB828/2SD1064 are classified by 1A h
FE
as follows :
70
Q
140
100
R
200
140
S
280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/10996TS (KOTO)/2-3847/4027KI/7011KI No.722–1/4

2SB828S相似产品对比

2SB828S 2SB828Q 2SB828R 2SD1064Q 2SD1064R 2SD1064S
描述 12A, 50V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 12A, 50V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 12A, 50V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 12A, 50V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 12A, 50V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 12A, 50V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN
零件包装代码 TO-218 TO-218 TO-218 TO-218 TO-218 TO-218
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 2 2 2 2 2 2
Reach Compliance Code unknown unknow unknown unknown unknown unknow
最大集电极电流 (IC) 12 A 12 A 12 A 12 A 12 A 12 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 140 70 100 70 100 140
JEDEC-95代码 TO-218 TO-218 TO-218 TO-218 TO-218 TO-218
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
元件数量 1 1 1 1 1 1
端子数量 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
极性/信道类型 PNP PNP PNP NPN NPN NPN
功耗环境最大值 80 W 80 W 80 W 80 W 80 W 80 W
最大功率耗散 (Abs) 80 W 80 W 80 W 80 W 80 W 80 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 10 MHz 10 MHz 10 MHz 10 MHz 10 MHz 10 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V 0.4 V 0.4 V 0.4 V
Objectid 1417098426 - 1417098378 1417098544 1417098402 -

 
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