Notice
1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5754
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for 460 MHz to 2.4 GHz medium output power amplification
• P
O (1 dB)
= 26.0 dBm TYP. @ V
CE
= 3.6 V, f = 1.8 GHz, P
in
= 15 dBm
• High collector efficiency:
η
C
= 60%
• UHS0-HV technology (f
T
= 25 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
2SC5754
2SC5754-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10008EJ02V0DS (2nd edition)
Date Published March 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 2001, 2003
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