SGR20N40L / SGU20N40L
August 2001
IGBT
SGR20N40L / SGU20N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Features
•
•
•
•
•
High input impedance
High peak current capability (150A)
Easy gate drive
Surface Mount : SGR20N40L
Straight Lead : SGU20N40L
Application
Strobe flash.
C
C
G
G
E
D-PAK
GC E
I-PAK
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
CM (1)
P
C
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector - Emitter Voltage
Gate - Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
SGR / SGU20N40L
400
±
6
150
45
-40 to +150
-40 to +150
300
Units
V
V
A
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
(D-PAK)
R
θJA
(I-PAK)
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
3.0
50
110
Units
°C/W
°C/W
°C/W
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
SGR20N40L / SGU20N40L
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
450
--
--
--
--
--
--
10
±
0.1
V
µA
µA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
C-E Saturation Current
I
C
= 1mA, V
CE
= V
GE
I
C
= 150A, V
GE
= 4.5V
0.5
2.0
1.0
4.5
1.4
8.0
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GE
= 0V, V
CE
= 30V,
f = 1MHz
--
--
--
3800
50
35
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 300V, I
C
= 150A,
V
GE
= 4.5V, R
G
= 15Ω*
Resistive Load
--
--
--
--
0.2
1.7
0.3
1.5
--
--
0.5
2.0
µs
µs
µs
µs
* Notes : Recommendation of R
G
Value : R
G
≥15Ω
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
SGR20N40L / SGU20N40L
200
Common Emitter
T
C
= 25℃
7
5.0V
4.5V
Common Emitter
V
GE
= 4.5V
150A
Collector-Emitter Voltage, V
CE
[v]
Collector Current, I
C
[A]
150
4.0V
3.5V
6
5
100
3.0V
4
100A
V
GE
= 2.5V
50
3
I
C
= 70A
0
0
2
4
6
8
2
-50
0
50
100
150
Collector-Emitter Voltage, V
CE
[V]
Case Temperature, T
C
[
℃
]
Fig 1. Typical Output Characteristics
Fig 2. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T
C
= -40℃
20
Common Emitter
T
C
= 25℃
Collector-Emitter Voltage, V
CE
[V]
16
12
Gate-Emitter Voltage, V
GE
[V]
16
12
8
150A
4
100A
I
C
= 70A
0
0
1
2
3
4
5
6
8
150A
4
100A
I
C
= 70A
0
0
1
2
3
4
5
6
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
Fig 3. Saturation Voltage vs. V
GE
Fig 4. Saturation Voltage vs. V
GE
20
Common Emitter
T
C
= 125℃
10000
Cies
Collector-Emitter Voltage, V
CE
[V]
16
1000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
12
8
150A
100A
Capacitance [pF]
100
Coes
4
I
C
= 70A
0
0
1
2
3
4
5
6
10
0
10
Cres
20
30
40
Gate-Emitter Voltage, V
GE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2001 Fairchild Semiconductor Corporation
Fig 6. Capacitance Characteristics
SGR20N40L / SGU20N40L Rev. A1
SGR20N40L / SGU20N40L
6
Common Emitter
V
CC
= 300V, R
L
= 2Ω
T
C
= 25℃
200
175
Gate - Emitter Voltage, V
GE
[V]
Collector Peak Current, I
CP
[A]
150
125
100
75
50
25
4
2
0
0
10
20
30
40
50
60
0
0
2
4
6
8
10
Gate-Charge, Q
g
[nC]
Gate - Emitter Voltage, V
GE
[V]
Fig 7. Turn-On Characteristics vs.
Gate Resistance
Fig 8. Collector Current Limit vs.
Gate - Emitter Voltage Limit
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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INTERNATIONAL.
As used herein:
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which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
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