2SB824-S,2SB824-S pdf中文资料,2SB824-S引脚图,2SB824-S电路-Datasheet-电子工程世界

2SB824-S: 产品描述5A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN; 产品类别分立半导体晶体管; 文件大小55KB，共5页; 制造商SANYO; 官网地址http://www.semic.sanyo.co.jp/english/index-e.html

下载文档详细参数选型对比全文预览

2SB824-S概述

5A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN

2SB824-S规格参数

参数名称	属性值
Objectid	1481156478
零件包装代码	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3
针数	3
Reach Compliance Code	unknown
最大集电极电流 (IC)	5 A
集电极-发射极最大电压	50 V
配置	SINGLE
最小直流电流增益 (hFE)	140
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	PNP
功耗环境最大值	30 W
最大功率耗散 (Abs)	30 W
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	30 MHz
VCEsat-Max	0.4 V

2SB824-S相似产品对比

	2SB824-S	2SB824-Q	2SB824-R	2SD1060-Q	2SD1060-S	2SD1060-R
描述	5A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	5A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	5A, 50V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	5A, 50V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN	Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN	5A, 50V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
Objectid	1481156478	1481156472	1481156475	1481156595	1998751071	1481156598
零件包装代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
针数	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	5 A	5 A	5 A	5 A	5 A	5 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	140	70	100	70	140	100
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	PNP	PNP	PNP	NPN	NPN	NPN
最大功率耗散 (Abs)	30 W	30 W	30 W	30 W	30 W	30 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz
功耗环境最大值	30 W	30 W	30 W	30 W	-	30 W
VCEsat-Max	0.4 V	0.4 V	0.4 V	0.4 V	-	0.4 V

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