IC CMOS SERIES, HEX 1-INPUT INVERT GATE, PDIP14, DIP-14, Gate
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | National Semiconductor(TI ) |
包装说明 | DIP, DIP14,.3 |
Reach Compliance Code | unknown |
系列 | CMOS |
JESD-30 代码 | R-PDIP-T14 |
JESD-609代码 | e0 |
长度 | 19.18 mm |
负载电容(CL) | 50 pF |
逻辑集成电路类型 | INVERTER |
功能数量 | 6 |
输入次数 | 1 |
端子数量 | 14 |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
输出特性 | OPEN-DRAIN |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | DIP |
封装等效代码 | DIP14,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 5/15 V |
Prop。Delay @ Nom-Sup | 150 ns |
传播延迟(tpd) | 150 ns |
认证状态 | Not Qualified |
施密特触发器 | NO |
座面最大高度 | 5.08 mm |
最大供电电压 (Vsup) | 15 V |
最小供电电压 (Vsup) | 3 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 7.62 mm |
MM54C907N | MM74C906N | MM74C907N | MM74C907J | MM54C906J | |
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描述 | IC CMOS SERIES, HEX 1-INPUT INVERT GATE, PDIP14, DIP-14, Gate | IC CMOS SERIES, HEX 1-INPUT INVERT GATE, PDIP14, DIP-14, Gate | IC CMOS SERIES, HEX 1-INPUT INVERT GATE, PDIP14, DIP-14, Gate | IC CMOS SERIES, HEX 1-INPUT INVERT GATE, CDIP14, CERAMIC, DIP-14, Gate | IC CMOS SERIES, HEX 1-INPUT INVERT GATE, CDIP14, CERAMIC, DIP-14, Gate |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) |
包装说明 | DIP, DIP14,.3 | DIP-14 | DIP-14 | DIP, DIP14,.3 | DIP, DIP14,.3 |
Reach Compliance Code | unknown | compliant | compliant | unknown | unknow |
系列 | CMOS | CMOS | CMOS | CMOS | CMOS |
JESD-30 代码 | R-PDIP-T14 | R-PDIP-T14 | R-PDIP-T14 | R-GDIP-T14 | R-GDIP-T14 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
负载电容(CL) | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF |
逻辑集成电路类型 | INVERTER | INVERTER | INVERTER | INVERTER | INVERTER |
功能数量 | 6 | 6 | 6 | 6 | 6 |
输入次数 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 14 | 14 | 14 | 14 | 14 |
最高工作温度 | 125 °C | 85 °C | 85 °C | 85 °C | 125 °C |
最低工作温度 | -55 °C | -40 °C | -40 °C | -40 °C | -55 °C |
输出特性 | OPEN-DRAIN | OPEN-DRAIN | OPEN-DRAIN | OPEN-DRAIN | OPEN-DRAIN |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
封装代码 | DIP | DIP | DIP | DIP | DIP |
封装等效代码 | DIP14,.3 | DIP14,.3 | DIP14,.3 | DIP14,.3 | DIP14,.3 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
电源 | 5/15 V | 5/15 V | 5/15 V | 5/15 V | 5/15 V |
传播延迟(tpd) | 150 ns | 150 ns | 150 ns | 150 ns | 150 ns |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
施密特触发器 | NO | NO | NO | NO | NO |
座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm |
最大供电电压 (Vsup) | 15 V | 15 V | 15 V | 15 V | 15 V |
最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
长度 | 19.18 mm | 19.18 mm | 19.18 mm | - | 19.43 mm |
峰值回流温度(摄氏度) | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED |
Prop。Delay @ Nom-Sup | 150 ns | 150 ns | 150 ns | 150 ns | - |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED |
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