RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN
| 参数名称 | 属性值 |
| Objectid | 1544600607 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| YTEOL | 0 |
| 其他特性 | LOW NOISE |
| 最大集电极电流 (IC) | 0.02 A |
| 基于收集器的最大容量 | 0.7 pF |
| 集电极-发射极最大电压 | 8 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 135 |
| 最高频带 | S BAND |
| JESD-30 代码 | R-PDSO-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.1 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 10000 MHz |
| 2SC4871-5 | 2SC4871-3 | 2SC4871-4 | 2SC4871-TL | |
|---|---|---|---|---|
| 描述 | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, MCP, 3 PIN |
| Objectid | 1544600607 | 1544600605 | 1544600606 | 1417104631 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| 最大集电极电流 (IC) | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
| 基于收集器的最大容量 | 0.7 pF | 0.7 pF | 0.7 pF | 0.7 pF |
| 集电极-发射极最大电压 | 8 V | 8 V | 8 V | 8 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最高频带 | S BAND | S BAND | S BAND | S BAND |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 10000 MHz | 10000 MHz | 10000 MHz | 10000 MHz |
| 最小直流电流增益 (hFE) | 135 | 60 | 90 | - |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | - |
| 最大功率耗散 (Abs) | 0.1 W | 0.1 W | 0.1 W | - |
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