RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET,
| 参数名称 | 属性值 |
| 厂商名称 | NEC(日电) |
| Reach Compliance Code | unknown |
| 其他特性 | LOW NOISE, HIGH RELIABILITY |
| 外壳连接 | SOURCE |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 4 V |
| 最大漏极电流 (ID) | 0.02 A |
| FET 技术 | HETERO-JUNCTION |
| 最高频带 | X BAND |
| JESD-30 代码 | O-PRDB-G4 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 工作模式 | DEPLETION MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | DISK BUTTON |
| 极性/信道类型 | N-CHANNEL |
| 最小功率增益 (Gp) | 11.5 dB |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | RADIAL |
| 晶体管元件材料 | SILICON |
| NE329S01-T1 | NE329S01 | NE329S01-T1B | |
|---|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, |
| 厂商名称 | NEC(日电) | NEC(日电) | NEC(日电) |
| Reach Compliance Code | unknown | unknown | unknown |
| 其他特性 | LOW NOISE, HIGH RELIABILITY | LOW NOISE, HIGH RELIABILITY | LOW NOISE, HIGH RELIABILITY |
| 外壳连接 | SOURCE | SOURCE | SOURCE |
| 配置 | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 4 V | 3 V | 4 V |
| 最大漏极电流 (ID) | 0.02 A | 0.02 A | 0.02 A |
| FET 技术 | HETERO-JUNCTION | HETERO-JUNCTION | HETERO-JUNCTION |
| 最高频带 | X BAND | X BAND | X BAND |
| JESD-30 代码 | O-PRDB-G4 | O-PRDB-G4 | O-PRDB-G4 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | ROUND | ROUND |
| 封装形式 | DISK BUTTON | DISK BUTTON | DISK BUTTON |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最小功率增益 (Gp) | 11.5 dB | 11.5 dB | 11.5 dB |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING |
| 端子位置 | RADIAL | RADIAL | RADIAL |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
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