Datasheet> 器件分类 > 分立半导体> 二极管> LT2A01-T

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LT2A01-T: 产品描述Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15,; 产品类别分立半导体二极管; 文件大小58KB，共2页; 制造商Diodes; 官网地址http://www.diodes.com/

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LT2A01-T概述

Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15,

LT2A01-T规格参数

参数名称	属性值
厂商名称	Diodes
Reach Compliance Code	unknown
ECCN代码	EAR99
应用	GENERAL PURPOSE
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-15
JESD-30 代码	O-PALF-W2
最大非重复峰值正向电流	70 A
元件数量	1
相数	1
端子数量	2
最大输出电流	2 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
认证状态	Not Qualified
最大重复峰值反向电压	50 V
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL

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LT2A01 - LT2A07

2.0A RECTIFIER

Features

Diffused Junction

High Current Capability and Low Forward

Voltage Drop

Surge Overload Rating to 70A Peak

Plastic Material - UL Flammability

Classification 94V-0

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.4 grams (approx)

Mounting Position: Any

Marking: Type Number

DO-15

Dim

Min

25.40

5.50

0.686

2.60

Max

—

7.62

0.889

3.6

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

@ T

= 55°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

Forward Voltage

Peak Reverse Leakage Current

at Rated DC Blocking Voltage

t Rating for Fusing (t < 8.3ms)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance Junction to Ambient (Note 1)

Operating and Storage Temperature Range

@ I

= 2.0A

= 25°C

@ TA = 100°C

Symbol

RRM

RWM

R(RMS)

FSM

qJA

STG

LT2

A01

@ T

= 25°C unless otherwise specified

LT2

A02

100

LT2

A03

200

140

LT2

A04

400

280

2.0

1.1

5.0

17.5

-65 to +150

LT2

A05

600

420

LT2

A06

800

560

LT2

A07

1000

700

Unit

µA

K/W

°C

Notes:

1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.

DS29008 Rev. A-2

1 of 2

LT2A01-LT2A07

LT2A01-T相似产品对比

	LT2A01-T	LT2A02-T	LT2A04-T	LT2A07-T	LT2A06-T	LT2A05-T
描述	Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 2A, 1000V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-15,	Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-15,
Reach Compliance Code	unknown	unknow	unknow	unknow	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
应用	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	DO-15	DO-15	DO-15	DO-15	DO-15	DO-15
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
最大非重复峰值正向电流	70 A	70 A	70 A	70 A	70 A	70 A
元件数量	1	1	1	1	1	1
相数	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
最大输出电流	2 A	2 A	2 A	2 A	2 A	2 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	50 V	100 V	400 V	1000 V	800 V	600 V
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
包装说明	-	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2

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