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HYM72V12C756K4-8

产品描述Synchronous DRAM Module, 128MX72, 6ns, CMOS, DIMM-168
产品类别存储    存储   
文件大小498KB,共15页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
下载文档 详细参数 选型对比 全文预览

HYM72V12C756K4-8概述

Synchronous DRAM Module, 128MX72, 6ns, CMOS, DIMM-168

HYM72V12C756K4-8规格参数

参数名称属性值
厂商名称SK Hynix(海力士)
零件包装代码DIMM
包装说明DIMM, DIMM168
针数168
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式DUAL BANK PAGE BURST
最长访问时间6 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)125 MHz
I/O 类型COMMON
JESD-30 代码R-XDMA-N168
内存密度9663676416 bit
内存集成电路类型SYNCHRONOUS DRAM MODULE
内存宽度72
功能数量1
端口数量1
端子数量168
字数134217728 words
字数代码128000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织128MX72
输出特性3-STATE
封装主体材料UNSPECIFIED
封装代码DIMM
封装等效代码DIMM168
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
电源3.3 V
认证状态Not Qualified
刷新周期8192
自我刷新YES
最大待机电流0.076 A
最大压摆率4.8 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子形式NO LEAD
端子节距1.27 mm
端子位置DUAL

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128Mx72 bits
PC100 SDRAM Registered DIMM
with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh
HYM72V12C756K4 Series
DESCRIPTION
The HYM72V12C756K4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six
64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in 8pin TSSOP package on a
168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the
PCB.
The HYM72V12C756K4 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 1Gbytes memory. The
HYM72V12C756K4 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and outputs are
synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.
FEATURES
support
PC100MHz
168pin SDRAM Registered DIMM
Serial Presence Detect with EEPROM
1.7” (43.18mm) Height PCB with double sided com-
ponents
Single 3.3±0.3V power supply
SDRAM internal banks : four banks
Module bank : two physical banks
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4 or 8 or Full page for Sequential Burst
All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
HYM72V12C756K4-8
HYM72V12C756K4-P
HYM72V12C756K4-S
Clock
Frequency
125MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
4 Banks
8K
Normal
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.1/Dec.2002

HYM72V12C756K4-8相似产品对比

HYM72V12C756K4-8 HYM72V12C756K4-P HYM72V12C756K4-S
描述 Synchronous DRAM Module, 128MX72, 6ns, CMOS, DIMM-168 Synchronous DRAM Module, 128MX72, 6ns, CMOS, DIMM-168 Synchronous DRAM Module, 128MX72, 6ns, CMOS, DIMM-168
厂商名称 SK Hynix(海力士) SK Hynix(海力士) SK Hynix(海力士)
零件包装代码 DIMM DIMM DIMM
包装说明 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
针数 168 168 168
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
访问模式 DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
最长访问时间 6 ns 6 ns 6 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 125 MHz 100 MHz 100 MHz
I/O 类型 COMMON COMMON COMMON
JESD-30 代码 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
内存密度 9663676416 bit 9663676416 bit 9663676416 bit
内存集成电路类型 SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
内存宽度 72 72 72
功能数量 1 1 1
端口数量 1 1 1
端子数量 168 168 168
字数 134217728 words 134217728 words 134217728 words
字数代码 128000000 128000000 128000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C
组织 128MX72 128MX72 128MX72
输出特性 3-STATE 3-STATE 3-STATE
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 DIMM DIMM DIMM
封装等效代码 DIMM168 DIMM168 DIMM168
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
电源 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified
刷新周期 8192 8192 8192
自我刷新 YES YES YES
最大待机电流 0.076 A 0.076 A 0.076 A
最大压摆率 4.8 mA 4.8 mA 4.8 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V
表面贴装 NO NO NO
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 NO LEAD NO LEAD NO LEAD
端子节距 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL

 
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