Microprocessor, 8-Bit, 6MHz, CMOS, CDIP40, SIDE BRAZED, CERAMIC, DIP-40
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP40,.6 |
| 针数 | 40 |
| Reach Compliance Code | unknown |
| 地址总线宽度 | 16 |
| 位大小 | 8 |
| 边界扫描 | NO |
| 最大时钟频率 | 12 MHz |
| 外部数据总线宽度 | 8 |
| 格式 | FIXED POINT |
| 集成缓存 | NO |
| JESD-30 代码 | R-CDIP-T40 |
| JESD-609代码 | e0 |
| 长度 | 50.8 mm |
| 低功率模式 | NO |
| DMA 通道数量 | |
| 外部中断装置数量 | 5 |
| 串行 I/O 数 | 1 |
| 端子数量 | 40 |
| 片上数据RAM宽度 | |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP40,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| RAM（字数） | 0 |
| 座面最大高度 | 4.826 mm |
| 速度 | 6 MHz |
| 最大压摆率 | 29 mA |
| 最大供电电压 | 5.5 V |
| 最小供电电压 | 4.5 V |
| 标称供电电压 | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 15.24 mm |
| uPs/uCs/外围集成电路类型 | MICROPROCESSOR |
| CA80C85B-6ID | CA80C85B-6CD | CA80C85B-5CD | CA80C85B-5ID | CA80C85B-5ED | CA80C85B-6ED | |
|---|---|---|---|---|---|---|
| 描述 | Microprocessor, 8-Bit, 6MHz, CMOS, CDIP40, SIDE BRAZED, CERAMIC, DIP-40 | RISC Microprocessor, 8-Bit, 6MHz, CMOS, CDIP40 | Microprocessor, 8-Bit, 5MHz, CMOS, CDIP40, SIDE BRAZED, CERAMIC, DIP-40 | Microprocessor, 8-Bit, 5MHz, CMOS, CDIP40, SIDE BRAZED, CERAMIC, DIP-40 | RISC Microprocessor, 8-Bit, 5MHz, CMOS, CDIP40 | RISC Microprocessor, 8-Bit, 6MHz, CMOS, CDIP40 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | DIP, DIP40,.6 | SIDE BRAZED, CERAMIC, DIP-40 | DIP, DIP40,.6 | DIP, DIP40,.6 | SIDE BRAZED, CERAMIC, DIP-40 | SIDE BRAZED, CERAMIC, DIP-40 |
| 针数 | 40 | 40 | 40 | 40 | 40 | 40 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 位大小 | 8 | 8 | 8 | 8 | 8 | 8 |
| JESD-30 代码 | R-CDIP-T40 | R-XDIP-T40 | R-CDIP-T40 | R-CDIP-T40 | R-XDIP-T40 | R-XDIP-T40 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 端子数量 | 40 | 40 | 40 | 40 | 40 | 40 |
| 最高工作温度 | 85 °C | 70 °C | 70 °C | 85 °C | 125 °C | 125 °C |
| 最低工作温度 | -40 °C | - | - | -40 °C | -55 °C | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC | CERAMIC |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 | DIP40,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 速度 | 6 MHz | 6 MHz | 5 MHz | 5 MHz | 5 MHz | 6 MHz |
| 标称供电电压 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| uPs/uCs/外围集成电路类型 | MICROPROCESSOR | MICROPROCESSOR, RISC | MICROPROCESSOR | MICROPROCESSOR | MICROPROCESSOR, RISC | MICROPROCESSOR, RISC |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 最大压摆率 | 29 mA | - | 21 mA | 29 mA | 32 mA | - |
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