HSMS-286x Series
Surface Mount Microwave
Schottky Detector Diodes
Data Sheet
Description
Avago’s HSMS-286x family of DC biased detector diodes
have been designed and optimized for use from 915
MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag
applications as well as large signal detection,
modulation, RF to DC conversion or voltage doubling.
Available in various package configurations, this family
of detector diodes provides low cost solutions to a wide
variety of design problems. Avago’s manufacturing
techniques assure that when two or more diodes are
mounted into a single surface mount package, they are
taken from adjacent sites on the wafer, assuring the
highest possible degree of match.
Features
• Surface Mount SOT-23/SOT-143 Packages
• Miniature SOT-323 and SOT-363 Packages
• High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
up to 35 mV/µW at 2.45 GHz
up to 25 mV/µW at 5.80 GHz
• Low FIT (Failure in Time) Rate*
• Tape and Reel Options Available
• Unique Configurations in Surface Mount SOT-363
Package
– increase flexibility
– save board space
– reduce cost
• HSMS-286K Grounded Center Leads Provide up to
10 dB Higher Isolation
• Matched Diodes for Consistent Performance
• Better Thermal Conductivity for Higher Power
Dissipation
• Lead-free Option Available
* For more information see the Surface Mount Schottky
Reliability Data Sheet.
Pin Connections and Package Marking
1
2
3
6
5
4
Notes:
1. Package marking provides orientation and identification.
2. The first two characters are the package marking code.
The third character is the date code.
SOT-23/SOT-143 Package Lead Code
Identification (top view)
SINGLE
3
SERIES
3
PLx
1
#0
2
COMMON
ANODE
3
1
#3
2
1
#5
2
SOT-323 Package Lead Code Identification
(top view)
SINGLE
SERIES
3
3
1
B
2
1
C
2
COMMON
ANODE
3
COMMON
CATHODE
3
1
#2
2
1
E
2
1
F
2
COMMON
CATHODE
3
SOT-363 Package Lead Code Identification
(top view)
HIGH ISOLATION
UNCONNECTED
UNCONNECTED PAIR
6
5
4
6
TRIO
5
4
1
#4
2
1
2
3
1
2
3
UNCONNECTED
PAIR
3
4
K
BRIDGE
QUAD
6
5
4
L
6
RING
QUAD
5
4
1
2
P
3
1
2
R
3
2
SOT-23/SOT-143 DC Electrical Specifications, T
C
= +25°C, Single Diode
Part
Number
HSMS-
2860
2862
2863
2864
2865
Test Conditions
Notes:
1.
∆V
F
for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2.
∆C
T
for diodes in pairs is 0.05 pF maximum at –0.5 V.
Package
Marking
Code
T0
T2
T3
T4
T5
Lead
Code
0
2
3
4
5
Configuration
Single
Series Pair
[1,2]
Common Anode
[1,2]
Common Cathode
[1,2]
Unconnected Pair
[1,2]
Forward Voltage
V
F
(mV)
250 Min.
350 Max.
Typical
Capacitance
C
T
(pF)
0.30
I
F
= 1.0 mA
V
R
= 0 V, f = 1 MHz
SOT-323/SOT-363 DC Electrical Specifications, T
C
= +25°C, Single Diode
Part
Number
HSMS-
286B
286C
286E
286F
286K
286L
286P
286R
Test Conditions
Notes:
1.
∆V
F
for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2.
∆C
T
for diodes in pairs is 0.05 pF maximum at –0.5 V.
Package
Marking
Code
T0
T2
T3
T4
TK
TL
TP
ZZ
Lead
Code
B
C
E
F
K
L
P
R
Configuration
Single
Series Pair
[1,2]
Common Anode
[1,2]
Common Cathode
[1,2]
High Isolation
Unconnected Pair
Unconnected Trio
Bridge Quad
Ring Quad
Forward Voltage
V
F
(mV)
250 Min.
350 Max.
Typical
Capacitance
C
T
(pF)
0.25
I
F
= 1.0 mA
V
R
= 0 V, f = 1 MHz
3
RF Electrical Specifications, T
C
= +25°C, Single Diode
Part
Number
HSMS-
2860
2862
2863
2864
2865
286B
286C
286E
286F
286K
286L
286P
286R
Test
Conditions
Typical Tangential Sensitivity
TSS (dBm) @ f =
915 MHz
2.45 GHz
5.8 GHz
– 57
– 56
– 55
Typical Voltage Sensitivity g
(mV/µW) @ f =
915 MHz
2.45 GHz
5.8 GHz
50
35
25
Typical Video
Resistance
RV (KΩ)
5.0
Video Bandwidth = 2 MHz
I
b
= 5
µA
Power in = –40 dBm
R
L
= 100 KΩ, I
b
= 5
µA
I
b
= 5
µA
Absolute Maximum Ratings, T
C
= +25°C, Single Diode
Symbol
P
IV
T
J
T
STG
T
OP
θ
jc
Parameter
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Operating Temperature
Thermal Resistance
[2]
Unit
V
°C
°C
°C
°C/W
Absolute Maximum
[1]
SOT-23/143
4.0
150
-65 to 150
-65 to 150
500
SOT-323/363
4.0
150
-65 to 150
-65 to 150
150
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins
where contact is made to the circuit board.
4
Equivalent Linear Circuit Model,
Diode chip
R
j
R
S
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
Units
V
pF
eV
A
A
Ω
V
Value
7.0
0.18
0.69
1E-5
5 E -8
1.08
6.0
0.65
2
0.5
C
j
N
R
S
P
B
(VJ)
P
T
(XTI)
M
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-286x product,
please refer to Application Note AN1124.
5
Typical Parameters, Single Diode
FORWARD VOLTAGE DIFFERENCE (mV)
100
FORWARD CURRENT (mA)
FORWARD CURRENT (µA)
100
I
F
(left scale)
10
10000
R
L
= 100 KΩ
1000
VOLTAGE OUT (mV)
10
T
A
= –55°C
T
A
= +25°C
T
A
= +85°C
2.45 GHz
100
915 MHz
1
10
10
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
.1
∆V
F
(right scale)
1
.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
FORWARD VOLTAGE (V)
1
0.05
0.10
0.15
0.20
1
0.25
0.1
-50
-40
-30
-20
-10
0
FORWARD VOLTAGE (V)
POWER IN (dBm)
Figure 1. Forward Current vs.
Forward Voltage at Temperature.
Figure 2. Forward Voltage Match.
Figure 3. +25°C Output Voltage vs.
Input Power, 3
µA
Bias.
30
R
L
= 100 KΩ
915 MHz
10,000
20
µA
1000
5
µA
100
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
10
R
L
= 100 KΩ
OUTPUT VOLTAGE (mV)
VOLTAGE OUT (mV)
40
10
µA
35
30
25
20
15
10
Input Power =
–30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
R
L
= 100 KΩ
.1
1
10
100
BIAS CURRENT (µA)
VOLTAGE OUT (mV)
10
2.45 GHz
5.8 GHz
1
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
0.3
-50
-40
POWER IN (dBm)
-30
1
–40
–30
–20
–10
0
10
5
POWER IN (dBm)
Figure 4. +25°C Expanded Output
Voltage vs. Input Power. See Figure 3.
Figure 5. Dynamic Transfer
Characteristic as a Function of DC Bias.
Figure 6. Voltage Sensitivity as a
Function of DC Bias Current.
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