Datasheet> 器件分类 > 分立半导体> 晶体管> CMLDM7003TEGTR

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CMLDM7003TEGTR: 产品描述Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小113KB，共2页; 制造商Central Semiconductor

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CMLDM7003TEGTR概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

CMLDM7003TEGTR规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Central Semiconductor
Reach Compliance Code	not_compliant
最大漏极电流 (Abs) (ID)	0.28 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	e0
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	0.35 W
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)

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CMLDM7003TEG

ENHANCED SPECIFICATION

SURFACE MOUNT PICOmini

DUAL N-CHANNEL

SILICON MOSFET

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM7003TEG

is an Enhancement-mode N-Channel Field Effect

Transistor, manufactured by the N-Channel DMOS

Process, designed for high speed pulsed amplifier and

driver applications. These special Dual Transistor devices

offer low drain-source on state resistance (rDS(ON)) and

ESD protection up to 2kV, and a Gate-Source Threshold

Voltage (VGS(th)) of 0.75V MIN to 1.0V MAX.

MARKING CODE: TEG

ENHANCED SPECIFICATION: VGS(th) = 1.0V MAX

SOT-563 CASE

FEATURES:

•

ESD protection up to 2kV

•

Device is

Halogen Free

by design

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Maximum Pulsed Drain Current

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VDS

VDG

VGS

IDM

TJ, Tstg

280

1.5

350

300

150

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

IGSSF,

IGSSR

VGS=5V

VGS=10V

VGS=12V

VDS=50V, VGS=0V

0.5

1.0

UNITS

μA

IGSSF, IGSSR

IDSS

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm

R0 (3-June 2008)

CMLDM7003TEGTR相似产品对比

	CMLDM7003TEGTR	CMLDM7003TEG
描述	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6
是否Rohs认证	不符合	符合
厂商名称	Central Semiconductor	Central Semiconductor
Reach Compliance Code	not_compliant	compliant
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	e0	e3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C
极性/信道类型	N-CHANNEL	N-CHANNEL
表面贴装	YES	YES
端子面层	Tin/Lead (Sn/Pb)	MATTE TIN (315)

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