Datasheet> 器件分类 > 分立半导体> 晶体管> CMLM7405BK

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CMLM7405BK: 产品描述Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PICOMINI-6; 产品类别分立半导体晶体管; 文件大小580KB，共2页; 制造商Central Semiconductor

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CMLM7405BK概述

Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PICOMINI-6

CMLM7405BK规格参数

参数名称	属性值
厂商名称	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-F6
针数	6
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	25 V
配置	SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)	50
JESD-30 代码	R-PDSO-F6
JESD-609代码	e0
元件数量	1
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	FLAT
端子位置	DUAL
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz

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CMLM7405

MULTI DISCRETE MODULE

™

SURFACE MOUNT

HIGH CURRENT

LOW VCE(SAT) SILICON PNP TRANSISTOR

AND

LOW VF SILICON SCHOTTKY DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLM7405 is a

single PNP Transistor and Schottky Diode packaged

in a space saving SOT-563 case is designed for small

signal general purpose applications where size and

operational efficiency are prime requirements.

• Complementary Device:

CMLM3405

• Combination High Current Low VCE(SAT)

Transistor and Low VF Schottky Diode.

SOT-563 CASE

MAXIMUM RATINGS - Case:

(TA=25°C)

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

MAXIMUM RATINGS - Q1:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

MAXIMUM RATINGS - D1:

(TA=25°C)

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current, tp

≤1.0ms

Peak Forward Surge Current, tp= 8.0ms

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

MARKING CODE: C57

SYMBOL

TJ, Tstg

SYMBOL

VCBO

VCEO

VEBO

ICM

SYMBOL

VRRM

IFRM

IFSM

350

-65 to +150

357

UNITS

°C

°C/W

UNITS

6.0

1.0

1.5

500

3.5

CHARACTERISTICS - Q1:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

TYP

VCB=40V

VEB=6.0V

IC=100µA

IC=10mA

IE=100µA

IC=50mA, IB=5.0mA

IC=100mA,

IC=200mA,

IC=500mA,

IC=800mA,

IB=10mA

IB=20mA

IB=50mA

IB=80mA

6.0

150

220

275

MAX

100

UNITS

150

250

400

450

1.1

0.9

IC=1.0A, IB=100mA

IC=800mA, IB=80mA

VCE=1.0V, IC=10mA

R1 (18-January 2010)

CMLM7405BK相似产品对比

	CMLM7405BK	CMLM7405TR	CMLM7405TRLEADFREE	CMLM7405BKLEADFREE
描述	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PICOMINI-6	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PICOMINI-6	Transistor	Transistor
Reach Compliance Code	compliant	compliant	compliant	compliant
最大集电极电流 (IC)	1 A	1 A	1 A	1 A
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single	Single
最小直流电流增益 (hFE)	50	50	100	100
最高工作温度	150 °C	150 °C	150 °C	150 °C
极性/信道类型	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W	0.35 W
表面贴装	YES	YES	YES	YES
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz

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