SRAM Module, 16KX32, 61ns, CMOS
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 61 ns |
| JESD-30 代码 | R-XDMA-T64 |
| JESD-609代码 | e0 |
| 内存密度 | 524288 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 32 |
| 功能数量 | 1 |
| 端子数量 | 64 |
| 字数 | 16384 words |
| 字数代码 | 16000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 16KX32 |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | DIP |
| 封装等效代码 | DIP64,.9 |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B (Modified) |
| 最大待机电流 | 0.125 A |
| 最大压摆率 | 1.05 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| IDT7M6032S45CB | IDT7M6032S35C | IDT7M6032S35CB | IDT7M6032S30C | IDT7M6032S30CB | IDT7M6032S45C | IDT7M6032S55CB | IDT7M6032S25C | |
|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 16KX32, 61ns, CMOS | SRAM Module, 16KX32, 51ns, CMOS | SRAM Module, 16KX32, 51ns, CMOS | SRAM Module, 16KX32, 43ns, CMOS | SRAM Module, 16KX32, 43ns, CMOS | SRAM Module, 16KX32, 61ns, CMOS | SRAM Module, 16KX32, 71ns, CMOS | SRAM Module, 16KX32, 38ns, CMOS |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | 3A001.A.2.C | EAR99 | 3A001.A.2.C | EAR99 | 3A001.A.2.C | EAR99 | 3A001.A.2.C | EAR99 |
| 最长访问时间 | 61 ns | 51 ns | 51 ns | 43 ns | 43 ns | 61 ns | 71 ns | 38 ns |
| JESD-30 代码 | R-XDMA-T64 | R-XDMA-T64 | R-XDMA-T64 | R-XDMA-T64 | R-XDMA-T64 | R-XDMA-T64 | R-XDMA-T64 | R-XDMA-T64 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 125 °C | 70 °C | 125 °C | 70 °C | 125 °C | 70 °C | 125 °C | 70 °C |
| 组织 | 16KX32 | 16KX32 | 16KX32 | 16KX32 | 16KX32 | 16KX32 | 16KX32 | 16KX32 |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP64,.9 | DIP64,.9 | DIP64,.9 | DIP64,.9 | DIP64,.9 | DIP64,.9 | DIP64,.9 | DIP64,.9 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.125 A | 0.125 A | 0.125 A | 0.125 A | 0.125 A | 0.125 A | 0.125 A | 0.125 A |
| 最大压摆率 | 1.05 mA | 1.05 mA | 1.05 mA | 1.15 mA | 1.15 mA | 1.05 mA | 1.05 mA | 1.2 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
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