NVD5803N
Power MOSFET
Features
40 V, 85 A, Single N−Channel, DPAK
•
•
•
•
•
Low R
DS(on)
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
40 V
R
DS(on)
MAX
5.7 mW @ 10 V
I
D
MAX
85 A
Applications
•
DC Motor Drive
•
Reverse Battery Protection
•
Glow Plug
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Continuous Drain
Current (R
qJC
)
(Note 1)
Power Dissipation
(R
qJC
) (Note 1)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
Symbol
V
DSS
V
GS
I
D
Value
40
"20
85
61
83
228
−55
to
175
85
240
W
A
°C
A
mJ
1 2
Unit
V
V
A
G
D
S
N−CHANNEL MOSFET
4
t
p
= 10
ms
3
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V, R
G
= 25
W,
I
L(pk)
= 40 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
T
L
260
°C
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
YWW
V58
03NG
2
Drain 3
1
Gate Source
Y
WW
5803N
G
= Year
= Work Week
= Device Code
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient
−
Steady State (Note 1)
Symbol
R
qJC
R
qJA
Value
1.8
42
Unit
°C/W
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
April, 2010
−
Rev. 0
1
Publication Order Number:
NVD5803N/D
NVD5803N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
ta
tb
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
T
J
= 25°C
T
J
= 150°C
V
GS
= 10 V, V
DD
= 32 V,
I
D
= 50 A, R
G
= 2.0
W
V
GS
= 10 V, V
DS
= 20 V,
I
D
= 50 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
V
GS
= 10 V, I
D
= 50 A
V
GS
= 5.0 V, I
D
= 30 A
Forward Transconductance
V
DS
= 15 V, I
D
= 15 A
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
12.6
21.4
28.3
6.6
ns
3220
390
270
51
3.8
12.7
12.7
nC
pF
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V, I
D
= 250
mA
40
40
1.0
100
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
−7.4
4.9
6.7
13.6
3.5
V
mV/°C
5.7
mW
S
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 30 A
0.88
0.73
27.2
14
13.2
17
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
NVD5803NT4G
Package
DPAK
(Pb−Free)
Shipping
†
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NVD5803N
TYPICAL CHARACTERISTICS
160
140
I
D
, DRAIN CURRENT (A)
120
100
80
60
40
20
0
0
1
2
3
4
10 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
V
GS
= 5 V
4.8 V
4.6 V
4.4 V
4.2 V
4.0 V
3.8 V
3.6 V
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
160
140
120
100
80
60
40
20
0
2
T
J
= 25°C
T
J
= 125°C
3
T
J
=
−55°C
4
5
6
V
DS
≥
10 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
I
D
= 50 A
T
J
= 25°C
0.008
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.008
Figure 2. Transfer Characteristics
T
J
= 25°C
0.007
V
GS
= 5 V
0.006
0.006
0.005
V
GS
= 10 V
0.004
2
4
6
8
10
0.004
5
20
35
50
65
80
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−55 −35 −15
100
I
D
= 50 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
10000
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
5
25
45
65
85 105 125 145 165
5
10
15
20
25
30
35
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVD5803N
TYPICAL CHARACTERISTICS
4000
3500
C, CAPACITANCE (pF)
3000
2500
2000
1500
1000
500
0
C
rss
0
10
20
30
DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
15
12
QT
9
6
3
0
V
DS
Q
gs
Q
gd
V
GS
18
12
6
0
55
30
24
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 50 A
T
J
= 25°C
40
0
5
10
15
20
25
30
35
40
45
50
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 32 V
I
D
= 85 A
V
GS
= 10 V
100
t, TIME (ns)
t
d(off)
t
r
10
t
f
t
d(on)
80
70
60
50
40
30
20
10
0
0.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
V
GS
= 10 V
Single Pulse
T
C
= 25°C
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
250
Figure 10. Diode Forward Voltage vs. Current
I
D
= 85 A
200
150
100
50
0
25
50
75
100
125
150
175
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (A)
100
10
ms
100
ms
1 ms
10 ms
dc
10
1
0.1
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAISN VOLTAGE (V)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NVD5803N
TYPICAL CHARACTERISTICS
R
qJC(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
0.01
0.000001
PULSE TIME (sec)
Figure 13. Thermal Response
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