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HLB123IB3

产品描述Transistor
产品类别分立半导体    晶体管   
文件大小53KB,共5页
制造商HSMC
官网地址http://www.hsmc.com.tw/
下载文档 详细参数 选型对比 全文预览

HLB123IB3概述

Transistor

HLB123IB3规格参数

参数名称属性值
厂商名称HSMC
包装说明,
Reach Compliance Codeunknown
最大集电极电流 (IC)1 A
配置Single
最小直流电流增益 (hFE)18
最高工作温度150 °C
极性/信道类型NPN
最大功率耗散 (Abs)20 W
表面贴装NO

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200202
Issued Date : 2002.06.01
Revised Date : 2005.07.13
Page No. : 1/5
HLB123I
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB123I is designed for high voltage. High speed switching inductive circuits
and amplifier applications.
Features
High Speed Switching
Low Saturation Voltage
High Reliability
TO-251
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 20 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 600 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 400 V
BV
EBO
Emitter to Base Voltage.............................................................................................................................. 8 V
I
C
Collector Current (DC) ...................................................................................................................................... 1 A
I
C
Collector Current (Pulse) ................................................................................................................................... 2 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)1
*V
BE(sat)2
*h
FE1
*h
FE2
*h
FE3
T
on
T
stg
T
off
Min.
600
400
8
-
-
-
-
-
-
10
10
6
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
0.4
2.4
0.3
Max.
-
-
-
10
10
0.8
0.9
1.2
1.8
50
-
-
1.1
4
0.7
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=600V, I
E
=0
V
BE
=9V, I
C
=0
I
C
=0.1A, I
B
=10mA
I
C
=0.3A, I
B
=30mA
I
C
=0.1A, I
B
=10mA
I
C
=0.3A, I
B
=30Ma
I
C
=0.3A, V
CE
=5V
I
C
=0.5A, V
CE
=5V
I
C
=1A, V
CE
=5V
V
CC
=100V, I
C
=1A, I
B1
=I
B2
=0.2A
V
CC
=100V, I
C
=1A, I
B1
=I
B2
=0.2A
V
CC
=100V, I
C
=1A, I
B1
=I
B2
=0.2A
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
uS
uS
uS
Classification Of hFE1
Rank
Range
HLB123I
B1
10-17
B2
13-22
B3
18-27
B4
23-32
B5
28-37
B6
33-42
B7
38-47
B8
43-50
HSMC Product Specification

HLB123IB3相似产品对比

HLB123IB3 HLB123IB2 HLB123IB4 HLB123IB5 HLB123IB7
描述 Transistor Transistor Transistor Transistor Transistor
厂商名称 HSMC HSMC HSMC HSMC HSMC
Reach Compliance Code unknown unknown unknown unknown unknown
最大集电极电流 (IC) 1 A 1 A 1 A 1 A 1 A
配置 Single Single Single Single Single
最小直流电流增益 (hFE) 18 13 23 28 38
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
极性/信道类型 NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 20 W 20 W 20 W 20 W 20 W
表面贴装 NO NO NO NO NO

 
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