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MMBTA13_08

产品描述NPN Darlington Amplifier Transistor
文件大小147KB,共5页
制造商MCC
官网地址http://www.mccsemi.com
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MMBTA13_08概述

NPN Darlington Amplifier Transistor

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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MMBTA13
MMBTA14
Features
Operating And Storage Temperatures –55
O
C to +150
O
C
R
θJA
is 556
O
C/W (Mounted on FR-5 PCB 1.0” x0.75” x0.062” )
Capable of 225mWatts of Power Dissipation
Marking : MMBTA13 ----K2D; MMBTA14 ---- K3D
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
NPN Darlington
Amplifier Transistor
SOT-23
A
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=100uAdc, I
B
=0)
Collector-Base Breakdown Voltage
Em
itter-Base Breakdown Voltage
Collector Current-Continuous
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=10Vdc, I
C
=0)
DC Current Gain*
(I
C
=10mAdc, V
CE
=5.0Vdc)
5000
10000
10000
20000
1.5
2.0
Vdc
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
Min
30
30
10
300
Max
Units
Vdc
Vdc
Vdc
mAdc
F
E
C
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
C
I
CBO
I
EBO
C
B
B
E
100
100
nAdc
nAdc
G
K
H
J
ON CHARACTERISTICS
h
FE
MMBTA13
MMBTA14
MMBTA13
MMBTA14
V
CE(sat)
V
BE(sat)
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
(I
C
=150mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=0.1mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc,V
CE
=5.0Vdc)
Current Gain-Bandwidth Product
(I
C
=10mAdc, V
CE
=5.0Vdc, f=100MHz)
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=1.0MHz)
Input Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=1.0MHz)
Delay Time
Rise Time
Storage Time
Fall Time
SMALL-SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
125
8.0
15
10
25
225
60
MHz
pF
pF
ns
ns
ns
ns
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
(V
CC
=30Vdc, V
BE
=0.5Vdc
I
C
=150mAdc, I
B1
=15mAdc)
(V
CC
=30Vdc, I
C
=150mAdc
I
B1
=I
B2
=15mAdc)
.037
.950
.037
.950
www.mccsemi.com
1 of 5
Revision: 4
2008/01/01

 
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