Ordering number : ENA1559
SFT1342
SANYO Semiconductors
DATA SHEET
SFT1342
Features
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Motor drive application.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--60
±20
--12
--48
1.0
15
150
-
-55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--6A
ID=--6A, VGS=--10V
ID=--6A, VGS=--4.5V
ID=--6A, VGS=--4V
-
-1.2
11
47
62
68
62
87
96
Ratings
min
--60
-
-1
±10
--2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
Marking : T1342
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
O1409PA TK IM TC-00002077 No. A1559-1/4
SFT1342
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
IS=--12A, VGS=0V
Ratings
min
typ
1150
115
95
10
37
135
75
26
3.5
5
-
-0.95
--1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7518-004
6.5
5.0
1.5
4
2.3
0.5
Package Dimensions
unit : mm (typ)
7003-004
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.8
1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 t o 0.2
1.2
0.6
1
2
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
2.5
0.85
0.7
5.5
7.0
0.85
0.5
1.2
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
0V
--10V
VIN
VDD= --30V
VIN
PW=10μs
D.C.≤1%
G
D
ID= --6A
RL=5Ω
VOUT
P.G
SFT1342
50Ω
S
No. A1559-2/4
SFT1342
--12
--11
--10
ID -- VDS
.0V
-
-10
.0V
--16
ID -- VGS
Ta= --
25
Ta=
7
--1.5
--6
.0
.0V
-3.5V
-
--4
Drain Current, ID -- A
V
--4
--14
--12
--10
--8
--6
--4
Drain Current, ID -- A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
--0.1
--0.2
--1
6
--9
--3.0V
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
0
--0.5
--1.0
25
°
C
VGS= --2.5V
--2
--2.0
--2.5
--25
°
C
5
°
C
--3.0
--3.5
25
°
C
--4.0
IT115025
140
160
IT15027
--1.2
IT15029
Drain-to-Source Voltage, VDS -- V
140
RDS(on) -- VGS
IT15024
160
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
100
140
120
100
80
60
40
20
0
--60
ID= --6A
80
60
40
20
0
--2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
A
6.0
= --
A
V, I D
6.0
-4.0
= --
=-
V, I D
.0A
V GS
-4.5
= --6
=-
V GS
0.0V, I D
= --1
VGS
--40
--20
0
20
40
60
80
100
120
Gate-to-Source Voltage, VGS -- V
5
|
y
fs
|
-- ID
IT15026
3
2
--10
7
5
Ambient Temperature, Ta --
°C
IS -- VSD
Forward Transfer Admittance,
|
y
fs
|
-- S
3
2
VDS= --10V
VGS=0V
25
C
5
°
--2
=
Ta
°
C
75
°
C
Source Current, IS -- A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
--0.01
3
2
--1.0
7
5
3
2
Ta=7
5
°
C
--0.1
7
5
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2 3
--0.01
--0.2
--0.4
--0.6
--25
°
C
25
°
C
--0.8
--1.0
Drain Current, ID -- A
5
3
SW Time -- ID
IT15028
3
2
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
VDD= --30V
VGS= --10V
f=1MHz
Switching Time, SW Time -- ns
2
td (off)
Ciss, Coss, Crss -- pF
1000
7
5
3
2
100
7
5
3
2
tf
tr
100
7
5
Coss
Crss
10
7
5
--0.1
2
3
5
7 --1.0
td(on)
2
3
5
7 --10
2
3
3
0
--10
--20
--30
--40
--50
75
°
C
--60
IT15031
Drain Current, ID -- A
.5
V
VDS= --10V
IT15030
Drain-to-Source Voltage, VDS -- V
No. A1559-3/4
°
C
SFT1342
--10
--9
VGS -- Qg
VDS= --30V
ID= --12A
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
ASO
IDP= --48A
PW≤10μs
10
μ
s
10
0
μ
s
1m
s
Gate-to-Source Voltage, VGS -- V
--8
--7
--6
--5
--4
--3
--2
--1
0
0
5
10
15
20
25
30
IT115032
Drain Current, ID -- A
ID= --12A
DC
era
tio
Operation in
n
this area is
limited by RDS(on).
op
10
10m
0m
s
s
--0.1
--0.1
Tc=25
°
C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
Drain-to-Source Voltage, VDS -- V
20
5 7 --100
IT15033
PD -- Tc
Allowable Power Dissipation, PD -- W
1.0
Allowable Power Dissipation, PD -- W
100
120
140
160
15
0.8
No
0.6
he
at
sin
10
k
0.4
5
0.2
0
0
20
40
60
80
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT12263
Case Temperature, Tc --
°C
IT15034
Note on usage : Since the SFT1342 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of October, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1559-4/4
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